Archive: 2009 - Moldavian Journal of the Physical Sciences

05 Sep 2009

2009
V. 8
3-4
(p.319 - 324)

Quantum oscillations of resistivity in bismuth nanowires

Authors:

Condrea, Elena; Nicorici, Andrei

Summary:

We studied the influence of uniaxial deformation on the transport properties of bismuth wires in the wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate from quantum size effect. Evaluation of period of oscillations allows us to identify the groups of carriers involved in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.

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<meta name="citation_title" content="Quantum oscillations of resistivity in bismuth nanowires 
">
<meta name="citation_author" content="Condrea, Elena">
<meta name="citation_author" content="Nicorici, Andrei">
<meta name="citation_publication_date" content="2009/09/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="8">
<meta name="citation_issue" content="3-4">
<meta name="citation_firstpage" content="319">
<meta name="citation_lastpage" content="324">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Quantum%20oscillations%20of%20resistivity%20in%20bismuth%20nanowires.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-4168</doi_batch_id>
<timestamp>1597494341</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2009</year>
</publication_date>
<issue>3-4(8)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>Quantum oscillations of resistivity in bismuth nanowires 
</title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Elena</given_name>
<surname>Condrea</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Andrei</given_name>
<surname>Nicorici</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2009</year>
</publication_date>
<pages>
<first_page>319</first_page>
<last_page>324</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-4168</cfResPublId>
<cfResPublDate>2009-09-05</cfResPublDate>
<cfVol>8</cfVol>
<cfIssue>3-4</cfIssue>
<cfStartPage>319</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2009/article/4168</cfURI>
<cfTitle cfLangCode='RO' cfTrans='o'>Quantum oscillations of resistivity in bismuth nanowires 
</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>We studied the influence of uniaxial deformation on the transport properties of bismuth 

wires in the wide range of temperatures. Measurements of the resistance of bismuth 

nanowires with several diameters and different quality reveal oscillations on the dependence 
of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) 
at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate 
from quantum size effect. 
Evaluation of period of oscillations allows us to identify the groups of carriers involved 
in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for 
two experimentally observed sets of oscillations from light and heavy electrons. </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2009-09-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2009-09-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-995</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2009-09-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-194</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2009-09-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-995</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-995-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2009-09-05T24:00:00</cfStartDate>
<cfFamilyNames>Кондря</cfFamilyNames>
<cfFirstNames>Елена</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-194</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-194-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2009-09-05T24:00:00</cfStartDate>
<cfFamilyNames>Nikorich</cfFamilyNames>
<cfFirstNames>A.</cfFirstNames>
<cfFamilyNames>Никорич</cfFamilyNames>
<cfFirstNames>Андрей</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_4168,
author = {Condrea, E.P. and Nicorici, A.V.},
title = {Quantum oscillations of resistivity in bismuth nanowires 
},
journal = {Moldavian Journal of the Physical Sciences},
year = {2009},
volume = {8 (3-4)},
pages = {319-324},
month = {Sep},
abstract = {(EN) We studied the influence of uniaxial deformation on the transport properties of bismuth 

wires in the wide range of temperatures. Measurements of the resistance of bismuth 

nanowires with several diameters and different quality reveal oscillations on the dependence 
of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) 
at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate 
from quantum size effect. 
Evaluation of period of oscillations allows us to identify the groups of carriers involved 
in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for 
two experimentally observed sets of oscillations from light and heavy electrons. },
url = {https://ibn.idsi.md/vizualizare_articol/4168},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Condrea, E.P.</creatorName>
<affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Nicorici, A.V.</creatorName>
<affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='ro'>Quantum oscillations of resistivity in bismuth nanowires 
</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2009</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2009-09-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>We studied the influence of uniaxial deformation on the transport properties of bismuth 

wires in the wide range of temperatures. Measurements of the resistance of bismuth 

nanowires with several diameters and different quality reveal oscillations on the dependence 
of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) 
at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate 
from quantum size effect. 
Evaluation of period of oscillations allows us to identify the groups of carriers involved 
in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for 
two experimentally observed sets of oscillations from light and heavy electrons. </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Condrea, E.P.</dc:creator>
<dc:creator>Nicorici, A.V.</dc:creator>
<dc:date>2009-09-05</dc:date>
<dc:description xml:lang='en'>We studied the influence of uniaxial deformation on the transport properties of bismuth 

wires in the wide range of temperatures. Measurements of the resistance of bismuth 

nanowires with several diameters and different quality reveal oscillations on the dependence 
of resistance under uniaxial strain at T = 4.2 K. Amplitude of oscillations is significant (38%) 
at helium temperature and becomes smearing at T = 77 K. Observed oscillations originate 
from quantum size effect. 
Evaluation of period of oscillations allows us to identify the groups of carriers involved 
in transport. Calculated periods of 42.2 and 25.9 nm satisfy approximately the ratio 2:1 for 
two experimentally observed sets of oscillations from light and heavy electrons. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 8 (3-4) 319-324</dc:source>
<dc:title>Quantum oscillations of resistivity in bismuth nanowires 
</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>