Archive: 2005 - Moldavian Journal of the Physical Sciences

05 Jan 2005

2005
V. 4
1
(p.5 - 24)

Spin-orbit interaction and spintronics effects in semiconductor structures

Authors:

Canţer, Valeriu

Summary:

A review of the recent results concerning the new concepts and achievements in the area of semiconductor spintronics (or spin-electronics) is presented. Because spin-orbit interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of electron spins and electrical detection of spin dynamics they form the fundamental mechanisms of new effects and the basis of different proposals for new spintronic devices. In addition to known channels of SOI in semiconductor materials and heterostructures, new terms of SOI, induced by interband interaction through the electrical polarization or atomic displacement like optical phonons are proposed and analyzed in the paper. These SOI 7mechanisms have the physical nature in the relativistic quantum mechanics with Lorentz boosts and this aspect is highlighted. Some particularities of the electronic states of semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI induced by the electrical polarization (EP) are studied. Size quantization states are shown to transform into interface ones at some value of the in-plane QW wave vector under SOI effect. Tunneling characteristics of single barrier heterostructure are analyzed in the conditions of both types of SOIs and are established to be spin-dependent under SOI induced by the EP. Several aspects dealing with the new discovered intrinsic spin and angular momentum Hall effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron system with the SOI of both intrinsic and EP induced types. New peculiarities of SHE and AMHE , induced by interband interaction of heavy and light holes are studied in p-doped semiconductors with band degeneracy in the framework of generalized Luttinger Hamiltonian. Spin-conductivity induced by the EP is shown to proportional to difference of the inverse values of the hole wave vectors.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="Spin-orbit interaction and spintronics effects in semiconductor structures">
<meta name="citation_author" content="Canţer, Valeriu">
<meta name="citation_publication_date" content="2005/01/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="4">
<meta name="citation_issue" content="1">
<meta name="citation_firstpage" content="5">
<meta name="citation_lastpage" content="24">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Spin_orbit%20interaction%20and%20spintronics%20effects%20in%20semiconductor%20structures.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-2975</doi_batch_id>
<timestamp>1597501441</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2005</year>
</publication_date>
<issue>1(4)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>Spin-orbit interaction and spintronics effects in semiconductor structures</title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Valeriu</given_name>
<surname>Canţer</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2005</year>
</publication_date>
<pages>
<first_page>5</first_page>
<last_page>24</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-2975</cfResPublId>
<cfResPublDate>2005-01-05</cfResPublDate>
<cfVol>4</cfVol>
<cfIssue>1</cfIssue>
<cfStartPage>5</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2005/article/2975</cfURI>
<cfTitle cfLangCode='RO' cfTrans='o'>Spin-orbit interaction and spintronics effects in semiconductor structures</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>A review of the recent results concerning the new concepts and achievements in the area 
of  semiconductor  spintronics  (or  spin-electronics)  is  presented.  Because  spin-orbit 
interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of 
electron  spins  and  electrical  detection  of  spin  dynamics  they  form  the  fundamental 
mechanisms of new effects and the basis of different proposals for new spintronic devices. In 
addition  to  known  channels  of  SOI  in  semiconductor  materials  and  heterostructures,  new 
terms of SOI,  induced by  interband  interaction  through  the  electrical polarization or  atomic 
displacement  like  optical  phonons  are  proposed  and  analyzed  in  the  paper.  These  SOI 
  7mechanisms  have  the  physical  nature  in  the  relativistic  quantum  mechanics  with  Lorentz 
boosts  and  this  aspect  is  highlighted.  Some  particularities  of  the  electronic  states  of 
semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI 

induced by  the electrical polarization (EP) are studied. Size quantization states are shown  to 
transform into interface ones at some value of the in-plane QW wave vector under SOI effect. 
Tunneling  characteristics  of  single  barrier  heterostructure  are  analyzed  in  the  conditions  of 
both  types of SOIs  and  are established  to be  spin-dependent under SOI  induced by  the EP. 
 Several aspects dealing with  the new discovered  intrinsic  spin and angular momentum Hall 
effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron 
system with  the SOI of both  intrinsic and EP  induced  types. New peculiarities of SHE  and 
AMHE  ,  induced  by  interband  interaction  of  heavy  and  light  holes  are  studied  in  p-doped 
semiconductors  with  band  degeneracy  in  the  framework  of  generalized   Luttinger 

Hamiltonian. Spin-conductivity  induced by  the EP  is  shown  to proportional  to difference of 
the inverse values of the hole wave vectors.   </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-01-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2005-01-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-196</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-01-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-196</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-196-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2005-01-05T24:00:00</cfStartDate>
<cfFamilyNames>Kantser</cfFamilyNames>
<cfFirstNames>Valeriu</cfFirstNames>
<cfFamilyNames>Canţer</cfFamilyNames>
<cfFirstNames>Valeriu</cfFirstNames>
<cfFamilyNames>Канцер</cfFamilyNames>
<cfFirstNames>Валерий</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_2975,
author = {Canţer, V.G.},
title = {Spin-orbit interaction and spintronics effects in semiconductor structures},
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (1)},
pages = {5-24},
month = {Jan},
abstract = {(EN) A review of the recent results concerning the new concepts and achievements in the area 
of  semiconductor  spintronics  (or  spin-electronics)  is  presented.  Because  spin-orbit 
interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of 
electron  spins  and  electrical  detection  of  spin  dynamics  they  form  the  fundamental 
mechanisms of new effects and the basis of different proposals for new spintronic devices. In 
addition  to  known  channels  of  SOI  in  semiconductor  materials  and  heterostructures,  new 
terms of SOI,  induced by  interband  interaction  through  the  electrical polarization or  atomic 
displacement  like  optical  phonons  are  proposed  and  analyzed  in  the  paper.  These  SOI 
  7mechanisms  have  the  physical  nature  in  the  relativistic  quantum  mechanics  with  Lorentz 
boosts  and  this  aspect  is  highlighted.  Some  particularities  of  the  electronic  states  of 
semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI 

induced by  the electrical polarization (EP) are studied. Size quantization states are shown  to 
transform into interface ones at some value of the in-plane QW wave vector under SOI effect. 
Tunneling  characteristics  of  single  barrier  heterostructure  are  analyzed  in  the  conditions  of 
both  types of SOIs  and  are established  to be  spin-dependent under SOI  induced by  the EP. 
 Several aspects dealing with  the new discovered  intrinsic  spin and angular momentum Hall 
effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron 
system with  the SOI of both  intrinsic and EP  induced  types. New peculiarities of SHE  and 
AMHE  ,  induced  by  interband  interaction  of  heavy  and  light  holes  are  studied  in  p-doped 
semiconductors  with  band  degeneracy  in  the  framework  of  generalized   Luttinger 

Hamiltonian. Spin-conductivity  induced by  the EP  is  shown  to proportional  to difference of 
the inverse values of the hole wave vectors.   },
url = {https://ibn.idsi.md/vizualizare_articol/2975},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Canţer, V.G.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='ro'>Spin-orbit interaction and spintronics effects in semiconductor structures</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2005</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2005-01-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>A review of the recent results concerning the new concepts and achievements in the area 
of  semiconductor  spintronics  (or  spin-electronics)  is  presented.  Because  spin-orbit 
interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of 
electron  spins  and  electrical  detection  of  spin  dynamics  they  form  the  fundamental 
mechanisms of new effects and the basis of different proposals for new spintronic devices. In 
addition  to  known  channels  of  SOI  in  semiconductor  materials  and  heterostructures,  new 
terms of SOI,  induced by  interband  interaction  through  the  electrical polarization or  atomic 
displacement  like  optical  phonons  are  proposed  and  analyzed  in  the  paper.  These  SOI 
  7mechanisms  have  the  physical  nature  in  the  relativistic  quantum  mechanics  with  Lorentz 
boosts  and  this  aspect  is  highlighted.  Some  particularities  of  the  electronic  states  of 
semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI 

induced by  the electrical polarization (EP) are studied. Size quantization states are shown  to 
transform into interface ones at some value of the in-plane QW wave vector under SOI effect. 
Tunneling  characteristics  of  single  barrier  heterostructure  are  analyzed  in  the  conditions  of 
both  types of SOIs  and  are established  to be  spin-dependent under SOI  induced by  the EP. 
 Several aspects dealing with  the new discovered  intrinsic  spin and angular momentum Hall 
effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron 
system with  the SOI of both  intrinsic and EP  induced  types. New peculiarities of SHE  and 
AMHE  ,  induced  by  interband  interaction  of  heavy  and  light  holes  are  studied  in  p-doped 
semiconductors  with  band  degeneracy  in  the  framework  of  generalized   Luttinger 

Hamiltonian. Spin-conductivity  induced by  the EP  is  shown  to proportional  to difference of 
the inverse values of the hole wave vectors.   </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Canţer, V.G.</dc:creator>
<dc:date>2005-01-05</dc:date>
<dc:description xml:lang='en'>A review of the recent results concerning the new concepts and achievements in the area 
of  semiconductor  spintronics  (or  spin-electronics)  is  presented.  Because  spin-orbit 
interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of 
electron  spins  and  electrical  detection  of  spin  dynamics  they  form  the  fundamental 
mechanisms of new effects and the basis of different proposals for new spintronic devices. In 
addition  to  known  channels  of  SOI  in  semiconductor  materials  and  heterostructures,  new 
terms of SOI,  induced by  interband  interaction  through  the  electrical polarization or  atomic 
displacement  like  optical  phonons  are  proposed  and  analyzed  in  the  paper.  These  SOI 
  7mechanisms  have  the  physical  nature  in  the  relativistic  quantum  mechanics  with  Lorentz 
boosts  and  this  aspect  is  highlighted.  Some  particularities  of  the  electronic  states  of 
semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI 

induced by  the electrical polarization (EP) are studied. Size quantization states are shown  to 
transform into interface ones at some value of the in-plane QW wave vector under SOI effect. 
Tunneling  characteristics  of  single  barrier  heterostructure  are  analyzed  in  the  conditions  of 
both  types of SOIs  and  are established  to be  spin-dependent under SOI  induced by  the EP. 
 Several aspects dealing with  the new discovered  intrinsic  spin and angular momentum Hall 
effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron 
system with  the SOI of both  intrinsic and EP  induced  types. New peculiarities of SHE  and 
AMHE  ,  induced  by  interband  interaction  of  heavy  and  light  holes  are  studied  in  p-doped 
semiconductors  with  band  degeneracy  in  the  framework  of  generalized   Luttinger 

Hamiltonian. Spin-conductivity  induced by  the EP  is  shown  to proportional  to difference of 
the inverse values of the hole wave vectors.   </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (1) 5-24</dc:source>
<dc:title>Spin-orbit interaction and spintronics effects in semiconductor structures</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>