Archive: 2021 - Moldavian Journal of the Physical Sciences

30 Dec 2021

2021
V. 20
2
(p.163 - 169)

Transient photocurrent behavior in amorphous thin film heterostructures

CZU: :538.9+621.382

DOI: https://doi.org/10.53081/mjps.2021.20-2.07

Authors:

Iaseniuc Oxana

Summary:

The characteristics of transient photocurrent in amorphous heterostructures Al-As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66–Al in the case of the positive polarity of the applied voltage at the top illuminated Al electrode are presented and discussed in this paper. The complex structure of the spectral distribution of the stationary (Fig. 1) and the transient (Fig. 3) photocurrent characteristics can be assigned to the different values of the optical band gap Eg of the involved amorphous layers (about Eg ~ 2.0 eV for As0.40S0.30Se0.30 and Ge0.09As0.09Se0.82; about Eg ~ 3.0 eV for Ge0.30As0.04S0.66). It is found that the dependence of photocurrent on light intensity has a power-law behavior Ipc ~ Fα(1.0 ≤ α ≤ 0.5), which is characteristic of amorphous semiconductors with an exponential distribution of localized states in the band gap.

În acest articol sunt prezentate și analizate caracteristicile curentului fotoelectric tranzitoriu în heterostructurile amorfe Al–As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66–Al pentru cazul aplicarii campului electric de polaritate pozitivă către electrodul din Al de la suprafața iluminat. Structura complexa a curbelor se distribuţie spectrala și a curenților fotoelectrici tranzistorii se datorează a diferitor valori a benziilor optice interzise Eg ale straturilor amorfe componente (Eg ~ 2.0 eV pentru As0.40S0.30Se0.30 și Ge0.09As0.09Se0.82, și Eg ~ 3.0 eV pentru Ge0.30As0.04S0.66). A fost stabilit, că dependența curentului fotoelectric de intensitatea luminii se caracterizeaza conform unei dependențe cu caracter de putere Ipc ~ Fα (1.0 ≤ α ≤ 0.5), si care este caracteristică pentru semiconductori amorfi cu distribuția exponențială a stărilor localizate în banda interzisă de energie.

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<dc:description xml:lang='en'><p>The characteristics of transient photocurrent in amorphous heterostructures Al-As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66&ndash;Al in the case of the positive polarity of the applied voltage at the top illuminated Al electrode are presented and discussed in this paper. The complex structure of the spectral distribution of the stationary (Fig. 1) and the transient (Fig. 3) photocurrent characteristics can be assigned to the different values of the optical band gap Eg of the involved amorphous layers (about Eg ~ 2.0 eV for As0.40S0.30Se0.30 and Ge0.09As0.09Se0.82; about Eg ~ 3.0 eV for Ge0.30As0.04S0.66). It is found that the dependence of photocurrent on light intensity has a power-law behavior Ipc ~ F&alpha;(1.0 <strong>&le; </strong>&alpha;<strong><em> </em>&le;</strong> 0.5), which is characteristic of amorphous semiconductors with an exponential distribution of localized states in the band gap.</p></dc:description>
<dc:description xml:lang='ro'><p>&Icirc;n acest articol sunt prezentate și analizate caracteristicile curentului fotoelectric tranzitoriu &icirc;n heterostructurile amorfe Al&ndash;As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66&ndash;Al pentru cazul aplicarii campului electric de polaritate pozitivă către electrodul din Al de la suprafața iluminat. Structura complexa a curbelor se distribuţie spectrala și a curenților fotoelectrici tranzistorii se datorează a diferitor valori a benziilor optice interzise Eg ale straturilor amorfe componente (Eg ~ 2.0 eV pentru As0.40S0.30Se0.30 și Ge0.09As0.09Se0.82, și Eg ~ 3.0 eV pentru Ge0.30As0.04S0.66). A fost stabilit, că dependența curentului fotoelectric de intensitatea luminii se caracterizeaza conform unei dependențe cu caracter de putere Ipc ~ F&alpha; (1.0 <strong>&le; </strong>&alpha;<strong><em> </em>&le;</strong> 0.5), si care este caracteristică pentru semiconductori amorfi cu distribuția exponențială a stărilor localizate &icirc;n banda interzisă de energie.</p></dc:description>
<dc:identifier>10.53081/mjps.2021.20-2.07</dc:identifier>
<dc:source>Moldavian Journal of the Physical Sciences 20 (2) 163-169</dc:source>
<dc:subject>amorphous multilayer structures</dc:subject>
<dc:subject>photocurrent relaxation</dc:subject>
<dc:subject>lux–ampere characteristics</dc:subject>
<dc:subject>structuri multistrat amorfe</dc:subject>
<dc:subject>relaxare fotocurentă</dc:subject>
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<dc:title><p>Transient photocurrent behavior in amorphous thin film heterostructures</p></dc:title>
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