Archive: 2021 - Moldavian Journal of the Physical Sciences

30 Dec 2021

2021
V. 20
2
(p.145 - 150)

Electrophysical properties of ITO:Ga2O3 films grown by rf magnetron sputtering

CZU: 538.9+535+539.1

DOI: https://doi.org/10.53081/mjps.2021.20-2.05

Authors:

Suman Victor; Morari Vadim; Rusu Emil; Ghimpu Lidia; Ursaki Veacheslav

Summary:

In this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters—the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron—are studied

În această lucrare au fost studiate proprietățile electrofizice ale filmelor ITO:Ga2O3 obținute prin pulverizare magnetron RF pe substraturi de sticlă și safir. Ca sursă de evaporare au servit țintele confecționate prin presare mecanică a pulberelor de ITO și Ga2O3. Au fos tcercetate caracteristicile electrofizice în dependență de parametrii optimi de obținere a filmelor, cum ar fi,:coraportul dintre fluxul de argon și oxigen, temperature substratului, puterea de descărcare a magnetronului.

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<dc:description xml:lang='en'><p>In this paper, the electrophysical properties of ITO:Ga2O3 thin films grown by RF magnetron sputtering on glass and sapphire substrates are studied. Targets prepared by mechanical pressing of ITO and Ga2O3 powders are used as an evaporation source. The electrophysical characteristics as a function of optimumfilm growth parameters&mdash;the correlation between the argon and oxygen flows, the substrate temperature, and the discharge power of the magnetron&mdash;are studied</p></dc:description>
<dc:description xml:lang='ro'><p>&Icirc;n această lucrare au fost studiate proprietățile electrofizice ale filmelor ITO:Ga2O3 obținute prin pulverizare magnetron RF pe substraturi de sticlă și safir. Ca sursă de evaporare au servit țintele confecționate prin presare mecanică a pulberelor de ITO și Ga2O3. Au fos tcercetate caracteristicile electrofizice &icirc;n dependență de parametrii optimi de obținere a filmelor, cum ar fi,:coraportul dintre fluxul de argon și oxigen, temperature substratului, puterea de descărcare a magnetronului.</p></dc:description>
<dc:identifier>10.53081/mjps.2021.20-2.05</dc:identifier>
<dc:source>Moldavian Journal of the Physical Sciences 20 (2) 145-150</dc:source>
<dc:subject>thin films</dc:subject>
<dc:subject>RF magnetron sputtering</dc:subject>
<dc:subject>current–voltage (I–V) characteristics</dc:subject>
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“ ... ”

SM ISO690:2012

SUMAN, Victor; MORARI, Vadim; RUSU, Emil; GHIMPU, Lidia; URSAKI, Veacheslav. Electrophysical properties of ITO:Ga2O3 films grown by rf magnetron sputtering. In: Moldavian Journal of the Physical Sciences. 2021, nr. 2(20), pp. 145-150. ISSN 1810-648X.