Archive: 2021 - Moldavian Journal of the Physical Sciences

06 Jul 2021

2021
V. 20
1
(p.84 - 93)

Structural and optical properties of ZnO:Ga thin films deposited on ito/glass substrates for optoelectronic applications

CZU: 535.33:543.4

DOI: https://doi.org/10.53081/mjps.2021.20-1.07

Authors:

Rusnac Dumitru; Lungu Ion; Ghimpu Lidia; Colibaba Gleb; Potlog Tamara

Summary:

Doped (with GaCl3), undoped ZnO and ITO/ZnO:Ga nanostructured thin films are synthesized using the spray pyrolysis method. The doped ZnO thin films are synthesized at the atomic ratio of Ga/Zn added in the starting solution fixed at 1, 2, 3, and 5. Gallium-doped ZnO films synthesized on glass/ITO substrates are annealed at 450⁰C in different environments: vacuum, oxygen, and hydrogen. X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and current–voltage (I–V) measurements are applied to characterize the structural properties, composition, surface morphology, and electrical properties of ZnO:Ga nanostructured thin films. X-ray diffraction analysis shows that ZnO:Ga films deposited on glass substrates have a dense and homogeneous surface with a hexagonal structure. The ZnO:Ga films deposited on glass/ITO substrates are composed of two phases, namely, hexagonal ZnO and cubic ITO. The I–V characteristics show the presence of good ohmic contacts between Al and In metals and ZnO:Ga thin films regardless of the nature of the substrate and the annealing atmosphere.

Au fost sintetizate straturi subțiri nanostructurate ZnO atât dopate cu (GaCl3), cât și nedopate, precum și straturi de ITO/ZnO:Ga, folosind metoda prin pulverizare cu piroliză. Straturile subțiri de ZnO dopate au fost sintetizate la raportul atomic Ga/Zn adăugat în soluția inițială fixă la 1, 2, 3 și 5 Straturile nanostructurate de ZnO dopate cu Ga obținute pe substraturi de sticlă/ITO au fost tratate termic la 450℃ în diferite medii: vid, oxigen și hidrogen. S-au realizat măsurătorile de difracție cu raze X (XRD), spectroscopie cu raze X cu dispersie energetică (EDX), microscopie cu forță atomică (AFM), curent-tensiune (I-V) pentru a caracteriza proprietățile structurale, compoziția, morfologia suprafeței și proprietățile electrice ale straturilor subțiri de ZnO:Ga. Analiza XRD arată că stratul de ZnO:Ga depus pe substratul de sticlă are o suprafață densă și omogenă cu structura hexagonală. Stratul de ZnO:Ga depus pe substraturi de sticlă/ITO indică două faze, acestea fiind ZnO hexagonal și ITO cubic. Caracteristica I-V prezintă contacte ohmice bune între metalele Al, In și straturile subțiri de ZnO:Ga, indiferent de natura substratului și de atmosfera de tratare termică.

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<meta name="citation_author" content="Rusnac Dumitru">
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<dc:subject>tratare termică</dc:subject>
<dc:subject>proprietăți structurale</dc:subject>
<dc:subject>morfologia straturilor subțiri</dc:subject>
<dc:title><p>Structural and optical properties of ZnO:Ga thin films deposited on ito/glass substrates for optoelectronic applications</p></dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

RUSNAC, Dumitru; LUNGU, Ion; GHIMPU, Lidia; COLIBABA, Gleb; POTLOG, Tamara. Structural and optical properties of ZnO:Ga thin films deposited on ito/glass substrates for optoelectronic applications. In: Moldavian Journal of the Physical Sciences. 2021, nr. 1(20), pp. 84-93. ISSN 1810-648X.