Archive: 2020 - Moldavian Journal of the Physical Sciences

30 Oct 2020

2020
V. 19
1-2
(p.98 - 109)

Injection photodiodes based on metal oxide semiconductors

CZU: 538.8+539.2+621.382

Authors:

Morari Vadim; Ursaki Veacheslav; Rusu Emil; Tiginyanu Ion

Summary:

A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol–gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of 500⁰C. The morphology of films is studied by scanning electron microscopy and atomic force microscopy, while their elemental composition and crystal structure are determined from energy dispersive X-ray (EDAX) and X-ray diffraction (XRD) analysis, respectively. It is shown that the produced n-ZnSnO/p-Si, n-ZnMgO/p-Si, and p-NiO/n-Si heterojunctions operate as injection photodiodes at a forward bias.

Este prezentată o analiză succintă a rezultatelor cercetărilor noastre recente obținute pe fotodiode cu injecție în baza materialelor semiconductoare cu oxid de metal depuse pe substraturi de Si. Prin metoda pirolizei cu aerosoli și sol-gel urmată de centrifugare au fost preparate o serie de filme subțiri de ZnSnO, NiO și Zn1-xMgxO pe substraturi de Si cu tratament termic post-depunere în aer la temperatura de 500⁰ C. Morfologia filmelor a fost studiată cu microscopia electronică de scanare și microscopia de forță atomică, iar compoziția chimică și structura cristalină au fost analizate cu dispersia energetică a razelor X (EDAX) și difracția razelor X (XRD), respectiv. S-a arătat că heterojoncțiunile elaborate n-ZnSnO/p-Si, n-ZnMgO/p-Si și p-NiO/n-Si funcționează ca fotodiode cu injecție la polarizare directă.

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<meta name="citation_title" content="<p>Injection photodiodes based on metal oxide semiconductors</p>">
<meta name="citation_author" content="Morari Vadim">
<meta name="citation_author" content="Ursaki Veacheslav">
<meta name="citation_author" content="Rusu Emil">
<meta name="citation_author" content="Tiginyanu Ion">
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BibTeX

@article{ibn_112704,
author = {Morari, V.A. and Ursachi, V.V. and Rusu, E.V. and Tighineanu, I.M.},
title = {<p>Injection photodiodes based on metal oxide semiconductors</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2020},
volume = {19 (1-2)},
pages = {98-109},
month = {Oct},
abstract = {(EN) <p>A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol&ndash;gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of 500<sup>0</sup>C. The morphology of films is studied by scanning electron microscopy and atomic force microscopy, while their elemental composition and crystal structure are determined from energy dispersive X-ray (EDAX) and X-ray diffraction (XRD) analysis, respectively. It is shown that the produced n-ZnSnO/p-Si, n-ZnMgO/p-Si, and p-NiO/n-Si heterojunctions operate as injection photodiodes at a forward bias.</p>},
abstract = {(RO) <p>Este prezentată o analiză succintă a rezultatelor cercetărilor noastre recente obținute pe fotodiode cu injecție &icirc;n baza materialelor semiconductoare cu oxid de metal depuse pe substraturi de Si. Prin metoda pirolizei cu aerosoli și sol-gel urmată de centrifugare au fost preparate o serie de filme subțiri de ZnSnO, NiO și Zn1-xMgxO pe substraturi de Si cu tratament termic post-depunere &icirc;n aer la temperatura de 500<sup>0</sup> C. Morfologia filmelor a fost studiată cu microscopia electronică de scanare și microscopia de forță atomică, iar compoziția chimică și structura cristalină au fost analizate cu dispersia energetică a razelor X (EDAX) și difracția razelor X (XRD), respectiv. S-a arătat că heterojoncțiunile elaborate n-ZnSnO/p-Si, n-ZnMgO/p-Si și p-NiO/n-Si funcționează ca fotodiode cu injecție la polarizare directă.</p>},
doi = {10.5281/zenodo.4118693},
url = {https://ibn.idsi.md/vizualizare_articol/112704},
keywords = {thin films, aerosol spray pyrolysis, sol–gel spin coating, injection photodiodes, Filme subțiri, piroliză cu aerosoli, metoda sol-gel, centrifugare, fotodiode cu injecție}
}

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<dc:description xml:lang='en'><p>A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol&ndash;gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of 500<sup>0</sup>C. The morphology of films is studied by scanning electron microscopy and atomic force microscopy, while their elemental composition and crystal structure are determined from energy dispersive X-ray (EDAX) and X-ray diffraction (XRD) analysis, respectively. It is shown that the produced n-ZnSnO/p-Si, n-ZnMgO/p-Si, and p-NiO/n-Si heterojunctions operate as injection photodiodes at a forward bias.</p></dc:description>
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