Archive: 2017 - Moldavian Journal of the Physical Sciences

29 Dec 2017

2017
V. 16
3-4
(p.219 - 226)

Structural and optical properties of composites containing A^IIB^VI and A^IIB^VI semiconductors

CZU: 537.311.322+539.19

Authors:

Evtodiev, Igor; Untila, Dumitru; Evtodiev, Silvia; Caraman, Iuliana; Gaşin, Petru; Dmitroglo, Liliana; Rotaru, Irina; Canţer, Valeriu

Summary:

By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="<p>Structural and optical properties of composites containing A<sup>II</sup>B<sup>VI</sup> and&nbsp; A<sup>II</sup>B<sup>VI</sup> semiconductors</p>">
<meta name="citation_author" content="Evtodiev, Igor">
<meta name="citation_author" content="Untila, Dumitru">
<meta name="citation_author" content="Evtodiev, Silvia">
<meta name="citation_author" content="Caraman, Iuliana">
<meta name="citation_author" content="Gaşin, Petru">
<meta name="citation_author" content="Dmitroglo, Liliana">
<meta name="citation_author" content="Rotaru, Irina">
<meta name="citation_author" content="Canţer, Valeriu">
<meta name="citation_publication_date" content="2017/12/29">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="16">
<meta name="citation_issue" content="3-4">
<meta name="citation_firstpage" content="219">
<meta name="citation_lastpage" content="226">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/219-226_1.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-71492</doi_batch_id>
<timestamp>1597482236</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2017</year>
</publication_date>
<issue>3-4(16)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title><p>Structural and optical properties of composites containing A<sup>II</sup>B<sup>VI</sup> and&nbsp; A<sup>II</sup>B<sup>VI</sup> semiconductors</p></title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Igor</given_name>
<surname>Evtodiev</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Dumitru</given_name>
<surname>Untila</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Silvia</given_name>
<surname>Evtodiev</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Iuliana</given_name>
<surname>Caraman</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Petru</given_name>
<surname>Gaşin</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Liliana</given_name>
<surname>Dmitroglo</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Irina</given_name>
<surname>Rotaru</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Valeriu</given_name>
<surname>Canţer</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2017</year>
</publication_date>
<pages>
<first_page>219</first_page>
<last_page>226</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-71492</cfResPublId>
<cfResPublDate>2017-12-29</cfResPublDate>
<cfVol>16</cfVol>
<cfIssue>3-4</cfIssue>
<cfStartPage>219</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2017/article/71492</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'><p>Structural and optical properties of composites containing A<sup>II</sup>B<sup>VI</sup> and&nbsp; A<sup>II</sup>B<sup>VI</sup> semiconductors</p></cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'><p>By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.</p></cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-238</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-25736</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-13382</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-17420</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-314</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-25077</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-25738</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-196</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-238</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-238-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Evtodiev</cfFamilyNames>
<cfFirstNames>Igor</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-25736</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-25736-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Untila</cfFamilyNames>
<cfFirstNames>Dumitru</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-13382</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-13382-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Evtodiev</cfFamilyNames>
<cfFirstNames>Silvia</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-17420</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-17420-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Caraman</cfFamilyNames>
<cfFirstNames>Iuliana</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-314</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-314-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Gashin</cfFamilyNames>
<cfFirstNames>P.</cfFirstNames>
<cfFamilyNames>Гашин</cfFamilyNames>
<cfFirstNames>Петру</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-25077</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-25077-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Dmitroglo</cfFamilyNames>
<cfFirstNames>Liliana</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-25738</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-25738-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Rotaru</cfFamilyNames>
<cfFirstNames>Irina</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-196</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-196-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-12-29T24:00:00</cfStartDate>
<cfFamilyNames>Kantser</cfFamilyNames>
<cfFirstNames>Valeriu</cfFirstNames>
<cfFamilyNames>Canţer</cfFamilyNames>
<cfFirstNames>Valeriu</cfFirstNames>
<cfFamilyNames>Канцер</cfFamilyNames>
<cfFirstNames>Валерий</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_71492,
author = {Evtodiev, I.A. and Untila, D.A. and Evtodiev, S.V. and Caraman, I.M. and Gaşin, P.A. and Dmitroglo, L.I. and Rotaru, I.A. and Canţer, V.G.},
title = {<p>Structural and optical properties of composites containing A<sup>II</sup>B<sup>VI</sup> and&nbsp; A<sup>II</sup>B<sup>VI</sup> semiconductors</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2017},
volume = {16 (3-4)},
pages = {219-226},
month = {Dec},
abstract = {(EN) <p>By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.</p>},
url = {https://ibn.idsi.md/vizualizare_articol/71492},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Evtodiev, I.A.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Untila, D.A.</creatorName>
<affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Evtodiev, S.V.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Caraman, I.M.</creatorName>
<affiliation>Universitatea „Vasile Alecsandri”, Bacău, România</affiliation>
</creator>
<creator>
<creatorName>Gaşin, P.A.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Dmitroglo, L.I.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Rotaru, I.A.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Canţer, V.G.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'><p>Structural and optical properties of composites containing A<sup>II</sup>B<sup>VI</sup> and&nbsp; A<sup>II</sup>B<sup>VI</sup> semiconductors</p></title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2017</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<subjects>
<subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>537.311.322+539.19</subject>
</subjects>
<dates>
<date dateType='Issued'>2017-12-29</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.</p></description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Evtodiev, I.A.</dc:creator>
<dc:creator>Untila, D.A.</dc:creator>
<dc:creator>Evtodiev, S.V.</dc:creator>
<dc:creator>Caraman, I.M.</dc:creator>
<dc:creator>Gaşin, P.A.</dc:creator>
<dc:creator>Dmitroglo, L.I.</dc:creator>
<dc:creator>Rotaru, I.A.</dc:creator>
<dc:creator>Canţer, V.G.</dc:creator>
<dc:date>2017-12-29</dc:date>
<dc:description xml:lang='en'><p>By thermal annealing of InSe, GaSe, and GaTe crystals in Zn vapors at 800, 870, and 1050K, respectively, a material consisting of ZnSe crystallites in both GaSe and InSe and ZnTe in GaTe has been prepared. Structural defects induced by intercalated atoms shield excitonic bonds in primary compounds and form both radiative recombination levels and electron trapping levels localized deep in the band gap of AIIIBVI crystals. The energies of trapping levels have been determined from thermally stimulated luminescence curves.</p></dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 16 (3-4) 219-226</dc:source>
<dc:title><p>Structural and optical properties of composites containing A<sup>II</sup>B<sup>VI</sup> and&nbsp; A<sup>II</sup>B<sup>VI</sup> semiconductors</p></dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

EVTODIEV, Igor; UNTILA, Dumitru; EVTODIEV, Silvia; CARAMAN, Iuliana; GASHIN, P.; DMITROGLO, Liliana; ROTARU, Irina; KANTSER, Valeriu. Structural and optical properties of composites containing AIIBVI and AIIBVI semiconductors. In: Moldavian Journal of the Physical Sciences. 2017, nr. 3-4(16), pp. 219-226. ISSN 1810-648X.