Archive: 2017 - Moldavian Journal of the Physical Sciences

03 Jul 2017

2017
V. 16
1-2
(p.94 - 100)

Microelectronic humidity–frequency transducer with humidity-sensitive capacitive elements

CZU: 537.311.322+621.382

Authors:

Osadchuk, V.; Osadchuk, A.; Krylik, L.; Seletska, O.

Summary:

A microelectronic transducer with capacitive elements implementing the principle of humidity to frequency conversion has been developed. Experiments has been conducted for samples of Р14 Rapid humidity-sensitive capacitors (Wired and SMD) of Innovative sensor technology company, HСH-1000 humidity-sensitive capacitors of Honeywell company, and humidity-sensitive MOS capacitor of Helium Research Institute ((Vinnytsya, Ukraine). The essential effect of the physical and chemical properties of the humidity-sensitive layer of the capacitive element on the sensitivity of the humidity–frequency transducer has been experimentally proved. In a range of 18–99% of humidity, the transducer with a humiditysensitive MOS capacitor based on amorphous silicon has the highest sensitivity of 3500 Hz/%. The range of change in the oscillation frequency is 320 kHz.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="<p>Microelectronic humidity&ndash;frequency transducer with humidity-sensitive capacitive elements</p>">
<meta name="citation_author" content="Osadchuk, V.">
<meta name="citation_author" content="Osadchuk, A.">
<meta name="citation_author" content="Krylik, L.">
<meta name="citation_author" content="Seletska, O.">
<meta name="citation_publication_date" content="2017/07/03">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="16">
<meta name="citation_issue" content="1-2">
<meta name="citation_firstpage" content="94">
<meta name="citation_lastpage" content="100">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/94-100.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-71454</doi_batch_id>
<timestamp>1597482508</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2017</year>
</publication_date>
<issue>1-2(16)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title><p>Microelectronic humidity&ndash;frequency transducer with humidity-sensitive capacitive elements</p></title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>V.</given_name>
<surname>Osadchuk</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>A.</given_name>
<surname>Osadchuk</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>L.</given_name>
<surname>Krylik</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>O.</given_name>
<surname>Seletska</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2017</year>
</publication_date>
<pages>
<first_page>94</first_page>
<last_page>100</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-71454</cfResPublId>
<cfResPublDate>2017-07-03</cfResPublDate>
<cfVol>16</cfVol>
<cfIssue>1-2</cfIssue>
<cfStartPage>94</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2017/article/71454</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'><p>Microelectronic humidity&ndash;frequency transducer with humidity-sensitive capacitive elements</p></cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'><p>A microelectronic transducer with capacitive elements implementing the principle of humidity to frequency conversion has been developed. Experiments has been conducted for samples of Р14 Rapid humidity-sensitive capacitors (Wired and SMD) of Innovative sensor technology company, HСH-1000 humidity-sensitive capacitors of Honeywell company, and humidity-sensitive MOS capacitor of Helium Research Institute ((Vinnytsya, Ukraine). The essential effect of the physical and chemical properties of the humidity-sensitive layer of the capacitive element on the sensitivity of the humidity&ndash;frequency transducer has been experimentally proved. In a range of 18&ndash;99% of humidity, the transducer with a humiditysensitive MOS capacitor based on amorphous silicon has the highest sensitivity of 3500 Hz/%. The range of change in the oscillation frequency is 320 kHz.</p></cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-61295</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-61296</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-61297</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-61298</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-61295</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-61295-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
<cfFamilyNames>Osadchuk</cfFamilyNames>
<cfFirstNames>V.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-61296</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-61296-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
<cfFamilyNames>Osadchuk</cfFamilyNames>
<cfFirstNames>A.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-61297</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-61297-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
<cfFamilyNames>Krylik</cfFamilyNames>
<cfFirstNames>L.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-61298</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-61298-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2017-07-03T24:00:00</cfStartDate>
<cfFamilyNames>Seletska</cfFamilyNames>
<cfFirstNames>O.</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_71454,
author = {Osadchuk, V.S. and Osadchuk, A.V. and Krylik, L.V. and Seletska, O.O.},
title = {<p>Microelectronic humidity&ndash;frequency transducer with humidity-sensitive capacitive elements</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2017},
volume = {16 (1-2)},
pages = {94-100},
month = {Jul},
abstract = {(EN) <p>A microelectronic transducer with capacitive elements implementing the principle of humidity to frequency conversion has been developed. Experiments has been conducted for samples of Р14 Rapid humidity-sensitive capacitors (Wired and SMD) of Innovative sensor technology company, HСH-1000 humidity-sensitive capacitors of Honeywell company, and humidity-sensitive MOS capacitor of Helium Research Institute ((Vinnytsya, Ukraine). The essential effect of the physical and chemical properties of the humidity-sensitive layer of the capacitive element on the sensitivity of the humidity&ndash;frequency transducer has been experimentally proved. In a range of 18&ndash;99% of humidity, the transducer with a humiditysensitive MOS capacitor based on amorphous silicon has the highest sensitivity of 3500 Hz/%. The range of change in the oscillation frequency is 320 kHz.</p>},
url = {https://ibn.idsi.md/vizualizare_articol/71454},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Osadchuk, V.S.</creatorName>
<affiliation>Vinnytsia National Technical University, Ucraina</affiliation>
</creator>
<creator>
<creatorName>Osadchuk, A.V.</creatorName>
<affiliation>Vinnytsia National Technical University, Ucraina</affiliation>
</creator>
<creator>
<creatorName>Krylik, L.V.</creatorName>
<affiliation>Vinnytsia National Technical University, Ucraina</affiliation>
</creator>
<creator>
<creatorName>Seletska, O.O.</creatorName>
<affiliation>Vinnytsia National Technical University, Ucraina</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'><p>Microelectronic humidity&ndash;frequency transducer with humidity-sensitive capacitive elements</p></title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2017</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<subjects>
<subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>537.311.322+621.382</subject>
</subjects>
<dates>
<date dateType='Issued'>2017-07-03</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>A microelectronic transducer with capacitive elements implementing the principle of humidity to frequency conversion has been developed. Experiments has been conducted for samples of Р14 Rapid humidity-sensitive capacitors (Wired and SMD) of Innovative sensor technology company, HСH-1000 humidity-sensitive capacitors of Honeywell company, and humidity-sensitive MOS capacitor of Helium Research Institute ((Vinnytsya, Ukraine). The essential effect of the physical and chemical properties of the humidity-sensitive layer of the capacitive element on the sensitivity of the humidity&ndash;frequency transducer has been experimentally proved. In a range of 18&ndash;99% of humidity, the transducer with a humiditysensitive MOS capacitor based on amorphous silicon has the highest sensitivity of 3500 Hz/%. The range of change in the oscillation frequency is 320 kHz.</p></description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Osadchuk, V.S.</dc:creator>
<dc:creator>Osadchuk, A.V.</dc:creator>
<dc:creator>Krylik, L.V.</dc:creator>
<dc:creator>Seletska, O.O.</dc:creator>
<dc:date>2017-07-03</dc:date>
<dc:description xml:lang='en'><p>A microelectronic transducer with capacitive elements implementing the principle of humidity to frequency conversion has been developed. Experiments has been conducted for samples of Р14 Rapid humidity-sensitive capacitors (Wired and SMD) of Innovative sensor technology company, HСH-1000 humidity-sensitive capacitors of Honeywell company, and humidity-sensitive MOS capacitor of Helium Research Institute ((Vinnytsya, Ukraine). The essential effect of the physical and chemical properties of the humidity-sensitive layer of the capacitive element on the sensitivity of the humidity&ndash;frequency transducer has been experimentally proved. In a range of 18&ndash;99% of humidity, the transducer with a humiditysensitive MOS capacitor based on amorphous silicon has the highest sensitivity of 3500 Hz/%. The range of change in the oscillation frequency is 320 kHz.</p></dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 16 (1-2) 94-100</dc:source>
<dc:title><p>Microelectronic humidity&ndash;frequency transducer with humidity-sensitive capacitive elements</p></dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

OSADCHUK, V.; OSADCHUK, A.; KRYLIK, L.; SELETSKA, O.. Microelectronic humidity–frequency transducer with humidity-sensitive capacitive elements. In: Moldavian Journal of the Physical Sciences. 2017, nr. 1-2(16), pp. 94-100. ISSN 1810-648X.