24 Jun 2016

Efficient low-cost solar cells based on ITO-nSi

CZU: 621.472-022.53

Authors:

Curmei, Nicolai

Summary:

A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the (100) surface of the n-type Si wafers with a concentration of 1015 cm–3, and their morphology has been examined. The as-deposited ITO thin films consist of crystallites with a height of 300–400 nm and a width of 100–200 nm. Properties of low-cost Cu/ITO/SiO2/n-Si/n Si/Cu solar cells fabricated by depositing ITO layers on n-Si wafers have been studied. The maximum efficiency has been found to be 13.8%.

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title = {Efficient low-cost solar cells based on ITO-nSi },
journal = {Moldavian Journal of the Physical Sciences},
year = {2016},
volume = {15 (1-2)},
pages = {76-82},
month = {Jun},
abstract = {(EN) A vapor phase pyrolysis deposition (VPPD) method has been described in [1] and applied to prepare indium tin oxide (ITO) thin films with thicknesses about 400 nm, with a conductivity of 8.3 • 103 –1 cm–1, and a transparency of 80% in the visible spectral range. The layers have been deposited on the (100) surface of the n-type Si wafers with a concentration of 1015 cm–3, and their morphology has been examined. The as-deposited ITO thin films consist of crystallites with a height of 300–400 nm and a width of 100–200 nm. Properties of low-cost Cu/ITO/SiO2/n-Si/n Si/Cu solar cells fabricated by depositing ITO layers on n-Si wafers have been studied. The maximum efficiency has been found to be 13.8%. },
url = {https://ibn.idsi.md/vizualizare_articol/48845},
}
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