Archive: 2016 - Moldavian Journal of the Physical Sciences

24 Jun 2016

2016
V. 15
1-2
(p.54 - 59)

Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer

CZU: 537.312.5+621.383.51

Authors:

Gaşin, Petru; Gagara, Ludmila; Chetruş, Petru; Inculeţ, Ion; Fiodorov, Vladimir; Quassem-Amjad, Al.

Summary:

The results of the studies of the effect of a CdO buffer layer on the photoelectrical parameters of CdS–CdTe solar cells have been described. It has been found that the formation of a 5–8 nm thick CdO buffer layer leads to an increase in the CdS–CdTe solar cell open circuit voltage (Voc) by 90–140 mV, short circuit current (Isc) by 1.4–3.2 mA/cm2, and efficiency by 2.8–4.1% at 300 K and an illumination of 100 mW/cm2.

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BibTeX

@article{ibn_48842,
author = {Gaşin, P.A. and Gagara, L. and Chetruş, P.I. and Inculeţ, I. and Fiodorov, V. and Quassem-Amjad, A.},
title = {Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer},
journal = {Moldavian Journal of the Physical Sciences},
year = {2016},
volume = {15 (1-2)},
pages = {54-59},
month = {Jun},
abstract = {(EN) The results of the studies of the effect of a CdO buffer layer on the photoelectrical parameters of CdS–CdTe solar cells have been described. It has been found that the formation of a 5–8 nm thick CdO buffer layer leads to an increase in the CdS–CdTe solar cell open circuit voltage (Voc) by 90–140 mV, short circuit current (Isc) by 1.4–3.2 mA/cm2, and efficiency by 2.8–4.1% at 300 K and an illumination of 100 mW/cm2. },
url = {https://ibn.idsi.md/vizualizare_articol/48842},
}

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“ ... ”

SM ISO690:2012

GASHIN, P.; GAGARA, Ludmila; KETRUSH, Petru; INCULETS, Ion; FIODOROV, Vladimir; QUASSEM-AMJAD, Al.. Photoelectrical parameters of ncds-pcdte thin film solar cells with CDO buffer layer. In: Moldavian Journal of the Physical Sciences. 2016, nr. 1-2(15), pp. 54-59. ISSN 1810-648X.