Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite
CZU: 535.37:548.571
Authors:
Dmitroglo, Liliana; Evtodiev, Igor; Caraman, Iuliana; Canţer, Valeriu; Untila, Dumitru; Stamate, Marius; Gaşin, Petru
Summary:
A material consisting of CdSe and GaSe crystallites with average dimensions of 34 nm and 30 nm respectively was obtained by heat treatment at 753K and 853K of GaSe single crystal plates in Cd vapors during 24 hours. As a result of Cd atoms interaction with Se atoms CdSe layers are formed both onto outer surface and at interface of layered Se-Ga-Ga-Se packages. CdSe crystallites on the surface grow in the form of plates along C6 crystallographic axis. Photoluminescence spectra of the composite, at 78K and 300K, contain predominant bands from the luminescent emission of GaSe and CdSe components.
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BibTeX
@article{ibn_43547,
author = {Dmitroglo, L.I. and Evtodiev, I.A. and Caraman, I.M. and Canţer, V.G. and Untila, D.A. and Stamate, M. and Gaşin, P.A.},
title = {Crystalline structure and photoluminescence of GaSe-CdSe nanocomposite},
journal = {Moldavian Journal of the Physical Sciences},
year = {2015},
volume = {14 (3-4)},
pages = {167-176},
month = {Dec},
abstract = {(EN) A material consisting of CdSe and GaSe crystallites with average dimensions of 34 nm and 30 nm respectively was obtained by heat treatment at 753K and 853K of GaSe single crystal plates in Cd vapors during 24 hours. As a result of Cd atoms interaction with Se atoms CdSe layers are formed both onto outer surface and at interface of layered Se-Ga-Ga-Se packages. CdSe crystallites on the surface grow in the form of plates along C6 crystallographic axis. Photoluminescence spectra of the composite, at 78K and 300K, contain predominant bands from the luminescent emission of GaSe and CdSe components. },
url = {https://ibn.idsi.md/vizualizare_articol/43547},
}
DataCite
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Dublin Core
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