Archive: 2013 - Moldavian Journal of the Physical Sciences

03 Jun 2013

2013
V. 12
3-4
(p.263 - 267)

Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials

Authors:

Cherner, Iacov

Summary:

Diode detectors (DDs) are widely used in electronic information and communication systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials  ">
<meta name="citation_author" content="Cherner, Iacov">
<meta name="citation_publication_date" content="2013/06/03">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="12">
<meta name="citation_issue" content="3-4">
<meta name="citation_firstpage" content="263">
<meta name="citation_lastpage" content="267">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Numerical%20modeling%20of%20detection%20in%20contacts%20of%20a%20bismuth%20antimony%20alloy%20eith%20different%20materials.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-29775</doi_batch_id>
<timestamp>1597489443</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2013</year>
</publication_date>
<issue>3-4(12)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials  </title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Iacov</given_name>
<surname>Cherner</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2013</year>
</publication_date>
<pages>
<first_page>263</first_page>
<last_page>267</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-29775</cfResPublId>
<cfResPublDate>2013-06-03</cfResPublDate>
<cfVol>12</cfVol>
<cfIssue>3-4</cfIssue>
<cfStartPage>263</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2013/article/29775</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'>Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials  </cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>Diode detectors (DDs) are widely used in electronic information and communication
systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical
reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.</cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2013-06-03T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2013-06-03T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-1030</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2013-06-03T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-1030</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1030-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2013-06-03T24:00:00</cfStartDate>
<cfFamilyNames>Kerner</cfFamilyNames>
<cfFirstNames>Iacov</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_29775,
author = {Cherner, I.I.},
title = {Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials  },
journal = {Moldavian Journal of the Physical Sciences},
year = {2013},
volume = {12 (3-4)},
pages = {263-267},
month = {Jun},
abstract = {(EN) Diode detectors (DDs) are widely used in electronic information and communication
systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical
reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.},
url = {https://ibn.idsi.md/vizualizare_articol/29775},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Cherner, I.I.</creatorName>
<affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials  </title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2013</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2013-06-03</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>Diode detectors (DDs) are widely used in electronic information and communication
systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical
reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.</description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Cherner, I.I.</dc:creator>
<dc:date>2013-06-03</dc:date>
<dc:description xml:lang='en'>Diode detectors (DDs) are widely used in electronic information and communication
systems. In this paper, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with a bismuth-antimony (Bi-Sb) semiconductor alloy are conducted. The possibilities to create DDs based on these contacts and working at the liquid helium temperature of 4.2 K or below are explored. The dependences of current responsivity (CR), voltage responsivity (VR), and noise equivalent power (NEP) on signal frequency (f) are analyzed. The role of the contact area is discussed. The obtained results are compared with literature data. DDs working at both the liquid nitrogen temperature (T = 77.4 K) and the liquid helium temperature are considered. The comparison with the available literature data shows that the proposed DDs can be 10-100 times better. The physical
reasons of these advantages are discussed. It is shown that unique properties of Bi-Sb alloys and especially of a Bi0.88Sb0.12 alloy make these alloys promising materials for cryoelectronics.</dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 12 (3-4) 263-267</dc:source>
<dc:title>Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials  </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

KERNER, Iacov. Numerical modeling of detection in contacts of a bismuth-antimony alloy with different materials . In: Moldavian Journal of the Physical Sciences. 2013, nr. 3-4(12), pp. 263-267. ISSN 1810-648X.