Low-temperature properties of semimetal nanowires
Authors:
Condrea, Eugeniu; Nicorici, Andrei
Summary:
A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.
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<meta name="citation_title" content="Low-temperature properties of semimetal nanowires"> <meta name="citation_author" content="Condrea, Eugeniu"> <meta name="citation_author" content="Nicorici, Andrei"> <meta name="citation_publication_date" content="2013/06/03"> <meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences"> <meta name="citation_volume" content="12"> <meta name="citation_issue" content="3-4"> <meta name="citation_firstpage" content="238"> <meta name="citation_lastpage" content="248"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Low%20temperature%20properties%20of%20semimetal%20nanowires.pdf">
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<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-29773</doi_batch_id> <timestamp>1597489330</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>mjps@nanotech.md</email_address> </depositor> <registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant> </head> <body> <journal> <journal_metadata> <full_title>Moldavian Journal of the Physical Sciences</full_title> <issn media_type='print'>1810648X</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2013</year> </publication_date> <issue>3-4(12)</issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>Low-temperature properties of semimetal nanowires</title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Eugeniu</given_name> <surname>Condrea</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Andrei</given_name> <surname>Nicorici</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2013</year> </publication_date> <pages> <first_page>238</first_page> <last_page>248</last_page> </pages> </journal_article> </journal> </body> </doi_batch>
CERIF
<?xml version='1.0' encoding='utf-8'?> <CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'> <cfResPubl> <cfResPublId>ibn-ResPubl-29773</cfResPublId> <cfResPublDate>2013-06-03</cfResPublDate> <cfVol>12</cfVol> <cfIssue>3-4</cfIssue> <cfStartPage>238</cfStartPage> <cfISSN>1810-648X</cfISSN> <cfURI>http://mjps.utm.md/archive/2013/article/29773</cfURI> <cfTitle cfLangCode='EN' cfTrans='o'>Low-temperature properties of semimetal nanowires</cfTitle> <cfAbstr cfLangCode='EN' cfTrans='o'>A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.</cfAbstr> <cfResPubl_Class> <cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId> <cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId> <cfStartDate>2013-06-03T24:00:00</cfStartDate> </cfResPubl_Class> <cfResPubl_Class> <cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId> <cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId> <cfStartDate>2013-06-03T24:00:00</cfStartDate> </cfResPubl_Class> <cfPers_ResPubl> <cfPersId>ibn-person-25498</cfPersId> <cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId> <cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId> <cfStartDate>2013-06-03T24:00:00</cfStartDate> </cfPers_ResPubl> <cfPers_ResPubl> <cfPersId>ibn-person-194</cfPersId> <cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId> <cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId> <cfStartDate>2013-06-03T24:00:00</cfStartDate> </cfPers_ResPubl> </cfResPubl> <cfPers> <cfPersId>ibn-Pers-25498</cfPersId> <cfPersName_Pers> <cfPersNameId>ibn-PersName-25498-3</cfPersNameId> <cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId> <cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId> <cfStartDate>2013-06-03T24:00:00</cfStartDate> <cfFamilyNames>Condrea</cfFamilyNames> <cfFirstNames>Eugeniu</cfFirstNames> </cfPersName_Pers> </cfPers> <cfPers> <cfPersId>ibn-Pers-194</cfPersId> <cfPersName_Pers> <cfPersNameId>ibn-PersName-194-3</cfPersNameId> <cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId> <cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId> <cfStartDate>2013-06-03T24:00:00</cfStartDate> <cfFamilyNames>Nikorich</cfFamilyNames> <cfFirstNames>A.</cfFirstNames> <cfFamilyNames>Никорич</cfFamilyNames> <cfFirstNames>Андрей</cfFirstNames> </cfPersName_Pers> </cfPers> </CERIF>
BibTeX
@article{ibn_29773,
author = {Condrea, E.S. and Nicorici, A.V.},
title = {Low-temperature properties of semimetal nanowires},
journal = {Moldavian Journal of the Physical Sciences},
year = {2013},
volume = {12 (3-4)},
pages = {238-248},
month = {Jun},
abstract = {(EN) A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.},
url = {https://ibn.idsi.md/vizualizare_articol/29773},
}
DataCite
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Condrea, E.S.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Nicorici, A.V.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Low-temperature properties of semimetal nanowires</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2013</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier> <dates> <date dateType='Issued'>2013-06-03</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'>A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.</description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>
Dublin Core
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Condrea, E.S.</dc:creator> <dc:creator>Nicorici, A.V.</dc:creator> <dc:date>2013-06-03</dc:date> <dc:description xml:lang='en'>A systematic study of the electrical resistance and thermopower of Bi nanowires has revealed the occurrence of a critical thickness of the wire below which structural defects can strongly influence the charge transport. At low temperatures, in Bi nanowires fabricated by the melt spinning method, the contribution of holes to the thermopower dominates over the electron contribution. Thermoelectric parameters of Bi nanowires may be controlled by applying a thermal treatment and/or a uniaxial pressure. A fairly high value of thermoelectric power factor has been found in a temperature range of 80–300 K, where the mechanism of electron transport is operating in the thermopower.</dc:description> <dc:source>Moldavian Journal of the Physical Sciences 12 (3-4) 238-248</dc:source> <dc:title>Low-temperature properties of semimetal nanowires</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>