03 Sep 2013

Variable range-hopping conductivity in Cu2ZnSiSe4

Authors:

Guc, Maxim

Summary:

Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.

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author = {Guc, M.S.},
title = {Variable range-hopping conductivity in Cu2ZnSiSe4},
journal = {Moldavian Journal of the Physical Sciences},
year = {2013},
volume = {12 (1-2)},
pages = {18-25},
month = {Sep},
abstract = {(EN) Single crystals of p-Cu2ZnSiSe4 were grown by chemical vapour transport using iodine as a transported agent. The temperature dependence of the resistivity is investigated in a range of T ~ 10–300 K. The Mott variable-range hopping conductivity is observed at T ~ 70–210 K. Its detailed analysis has yielded the values of the microscopic parameters, including the relative acceptor concentration, the critical concentration of the metal-insulator transition, the relative localization radius, the width of the acceptor band, and the average density of the localized states.},
url = {https://ibn.idsi.md/vizualizare_articol/27691},
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