Archive: 2012 - Moldavian Journal of the Physical Sciences

03 Dec 2012

2012
V. 11
4
(p.319 - 332)

Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells

Authors:

Sîrbu, Nicolae; Dorogan, Andrei; Dorogan, Valerian; Vieru, Tatiana; Ursachi, Veaceslav; Zalamai, Victor

Summary:

Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and P- polarizations at an incidence angle close to the normal (7о) as well as at a Brewster angle (76о). Narrow lines at 0.9021; 1.0161; 1.1302; 1.1973; and 1.2766 eV were observed in the reflectance and absorption spectra, which are due to hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), and hh3,lh3,-e3(1s) transitions, as well as features due to quantum dotes (QDs) formed at the interface of nanolayers and the buffer. The contours of reflectance and absorption spectra are calculated with a single-oscillator, and many-oscillator models. The oscillator strength and the damping parameter are estimated for the optical transitions in QWs and QDs. The radiative life time of the exciton in a QW and a QD was found to be τо = (2Г0)-1 = 2x10-12 s.

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BibTeX

@article{ibn_22423,
author = {Sîrbu, N.N. and Dorogan, A. and Dorogan, V.V. and Vieru, T.S. and Ursachi, V.V. and Zalamai, V.V.},
title = {Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells},
journal = {Moldavian Journal of the Physical Sciences},
year = {2012},
volume = {11 (4)},
pages = {319-332},
month = {Dec},
abstract = {(EN) Reflectance spectra of quantum wells (QWs) with 8-nm-thick In0.3Ga0.7As layers with a 9-nm-thick GaAs barrier layer up and a 100-nm-thick barrier layer down were investigated in the spectral range of 0.5–1.6 eV in S- and P- polarizations at an incidence angle close to the normal (7о) as well as at a Brewster angle (76о). Narrow lines at 0.9021; 1.0161; 1.1302; 1.1973; and 1.2766 eV were observed in the reflectance and absorption spectra, which are due to hh,lh1-e1(1s), hh1,lh1-e2(1s), hh2,lh2 -e2(1s), and hh3,lh3,-e3(1s) transitions, as well as features due to quantum dotes (QDs) formed at the interface of nanolayers and the buffer. The contours of reflectance and absorption spectra are calculated with a single-oscillator, and many-oscillator models. The oscillator strength and the damping parameter are estimated for the optical transitions in QWs and QDs. The radiative life time of the exciton in a QW and a QD was found to be τо = (2Г0)-1 = 2x10-12 s.},
url = {https://ibn.idsi.md/vizualizare_articol/22423},
}

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“ ... ”

SM ISO690:2012

SYRBU, Nicolae; DOROGAN, Andrei; DOROGAN, Valerian; VIERU, Tatiana; URSAKI, Veacheslav; ZALAMAI, Victor. Interband optical transitions in the region of exciton resonances in In0.3Ga0.7As/GaAs quantum wells. In: Moldavian Journal of the Physical Sciences. 2012, nr. 4(11), pp. 319-332. ISSN 1810-648X.