Archive: 2011 - Moldavian Journal of the Physical Sciences

05 Jun 2011

2011
V. 10
2
(p.189 - 193)

Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films

Authors:

Vasiliev, Ion; Iovu, Mihail; Colomeico, Eduard

Summary:

The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are deduced from these data. All parameters show two compositional thresholds, one situated near the xc(1)=0.09, and the other near the xc(2)=0.16-0.18. These phase transitions have been identified in the bulk samples by means of a differential-scanning calorimetric method (P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).

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BibTeX

@article{ibn_4367,
author = {Vasiliev, I.A. and Iovu, M.S. and Colomeico, E.P.},
title = {<p>Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2011},
volume = {10 (2)},
pages = {189-193},
month = {Jun},
abstract = {(EN) The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 
0.09,  0.14,  0.16,  0.18,  0.20  0.25,  and  0.30.  Compositional  dependences  of  the  low-frequency 
dielectric permeability, decay  time constant and  the Kohlrausch parameter of nonexponentiality 
are  deduced  from  these  data. All  parameters  show  two  compositional  thresholds,  one  situated 
near  the xc(1)=0.09,  and  the other near  the xc(2)=0.16-0.18. These phase  transitions have been 
identified  in  the  bulk  samples  by  means  of  a  differential-scanning  calorimetric  method  
(P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).  
},
url = {https://ibn.idsi.md/vizualizare_articol/4367},
}

DataCite

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Dublin Core

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<dc:description xml:lang='en'>The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 
0.09,  0.14,  0.16,  0.18,  0.20  0.25,  and  0.30.  Compositional  dependences  of  the  low-frequency 
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identified  in  the  bulk  samples  by  means  of  a  differential-scanning  calorimetric  method  
(P. Boolchand et al., Europhys. Lett., 52, p. 633, 2000).  
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<dc:source>Moldavian Journal of the Physical Sciences 10 (2) 189-193</dc:source>
<dc:title><p>Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films</p></dc:title>
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“ ... ”

SM ISO690:2012

VASILIEV, Ion; IOVU, Mihail; COLOMEICO, Eduard. Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films. In: Moldavian Journal of the Physical Sciences. 2011, nr. 2(10), pp. 189-193. ISSN 1810-648X.