05 Jun 2011

Electrical characteristics of ZnxIn2S3+x single crystals

Authors:

Jitari, Vasile; Şemeacova, Tatiana

Summary:

The electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near the conduction band. The main parameters of the material were determined, and the way was shown how they can be varied.

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<meta name="citation_title" content="<p>Electrical characteristics of ZnxIn2S3+x single crystals</p>">
<meta name="citation_author" content="Jitari, Vasile">
<meta name="citation_author" content="Şemeacova, Tatiana">
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title = {<p>Electrical characteristics of ZnxIn2S3+x single crystals</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2011},
volume = {10 (2)},
pages = {186-188},
month = {Jun},
abstract = {(EN) The  electrophysical  characteristics,  including  the  Hall  effect,  of  the  family  of  layered 
ZnxIn2S3 x  (x  =  1,  2,  and  3)  compounds  were  studied  in  a  temperature  range  of  250–500  K  ( C). They were  interpreted  taking  into account an exponential distribution of  traps near the 
conduction band. The main parameters of the material were determined, and the way was shown 
how they can be varied.  
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