Archive: 2011 - Moldavian Journal of the Physical Sciences

05 Jun 2011

2011
V. 10
2
(p.174 - 181)

New optical materials of Ge-As-S AND As-S-Se glassy systems

Authors:

Iovu, Mihail; Colomeico, Eduard; Benea, Vasile; Cojocaru, Ion

Summary:

Nowadays chalcogenide glasses are well known as multifunctional materials with specific electrical and optical properties, for their potential applications in microelectronics and optoelectronics as ovonic devices, passive and active optical elements, components of the photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition temperatures (Tg=300400 0C) and thermal stability. These glasses are of considerable interest also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17 cm2 /W) for g-As15Ge35Se50, and optical transmission at 1.55 m, that makes them suitable for photonic applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible and irreversible photoinduced effects. These effects are used for the fabrication of different registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers. Arsenic chalcogenide films usually become darkened under light irradiation in the region of the fundamental absorption edge. The changes in the optical constants (absorption coefficient , optical band gap Eg, and refractive index n) of the investigated materials under ionization irradiation and heat treatment were evaluated.

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photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, 
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BibTeX

@article{ibn_4364,
author = {Iovu, M.S. and Colomeico, E.P. and Benea, V.G. and Cojocaru, I.A.},
title = {<p>New optical materials of Ge-As-S AND As-S-Se glassy systems</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2011},
volume = {10 (2)},
pages = {174-181},
month = {Jun},
abstract = {(EN) Nowadays chalcogenide glasses are well known as multifunctional materials with specific 
electrical  and  optical  properties,  for  their  potential  applications  in  microelectronics  and 
optoelectronics  as  ovonic  devices,  passive  and  active  optical  elements,  components  of  the 
photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, 
As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition 
temperatures  (Tg=300400 

0C)  and  thermal  stability. These  glasses  are of  considerable  interest 
also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17
 cm2
/W) 

for g-As15Ge35Se50, and optical  transmission at 1.55 m,  that makes  them  suitable  for photonic 
applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible 
and  irreversible  photoinduced  effects.  These  effects  are  used  for  the  fabrication  of  different 
registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers. 
Arsenic chalcogenide films usually become darkened under light  irradiation  in  the region of  the 
fundamental  absorption  edge.  The  changes  in  the  optical  constants  (absorption  coefficient 
,  optical  band  gap  Eg,  and  refractive  index  n)  of  the  investigated materials  under  ionization 
irradiation and heat treatment were evaluated. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/4364},
}

DataCite

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electrical  and  optical  properties,  for  their  potential  applications  in  microelectronics  and 
optoelectronics  as  ovonic  devices,  passive  and  active  optical  elements,  components  of  the 
photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, 
As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition 
temperatures  (Tg=300400 

0C)  and  thermal  stability. These  glasses  are of  considerable  interest 
also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17
 cm2
/W) 

for g-As15Ge35Se50, and optical  transmission at 1.55 m,  that makes  them  suitable  for photonic 
applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible 
and  irreversible  photoinduced  effects.  These  effects  are  used  for  the  fabrication  of  different 
registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers. 
Arsenic chalcogenide films usually become darkened under light  irradiation  in  the region of  the 
fundamental  absorption  edge.  The  changes  in  the  optical  constants  (absorption  coefficient 
,  optical  band  gap  Eg,  and  refractive  index  n)  of  the  investigated materials  under  ionization 
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electrical  and  optical  properties,  for  their  potential  applications  in  microelectronics  and 
optoelectronics  as  ovonic  devices,  passive  and  active  optical  elements,  components  of  the 
photonic structures and recording media of high density. Chalcogenide glasses (As-Se, As-S-Se, 
As-Sb-S, Ge-As-Se) are characterized by the wide region of glass formation, high glass transition 
temperatures  (Tg=300400 

0C)  and  thermal  stability. These  glasses  are of  considerable  interest 
also due to high values of refractive index (n=2.42.65), high nonlinearities (n2=2.510-17
 cm2
/W) 

for g-As15Ge35Se50, and optical  transmission at 1.55 m,  that makes  them  suitable  for photonic 
applications. Chalcogenide glasses are sensitive to the external illumination and exhibit reversible 
and  irreversible  photoinduced  effects.  These  effects  are  used  for  the  fabrication  of  different 
registration media, diffractive structures, waveguides, photonic structures, and optical amplifiers. 
Arsenic chalcogenide films usually become darkened under light  irradiation  in  the region of  the 
fundamental  absorption  edge.  The  changes  in  the  optical  constants  (absorption  coefficient 
,  optical  band  gap  Eg,  and  refractive  index  n)  of  the  investigated materials  under  ionization 
irradiation and heat treatment were evaluated. 
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<dc:source>Moldavian Journal of the Physical Sciences 10 (2) 174-181</dc:source>
<dc:title><p>New optical materials of Ge-As-S AND As-S-Se glassy systems</p></dc:title>
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“ ... ”

SM ISO690:2012

IOVU, Mihail; COLOMEICO, Eduard; BENEA, Vasile; COJOCARU, Ion. New optical materials of Ge-As-S AND As-S-Se glassy systems. In: Moldavian Journal of the Physical Sciences. 2011, nr. 2(10), pp. 174-181. ISSN 1810-648X.