Archive: 2010 - Moldavian Journal of the Physical Sciences

05 Dec 2010

2010
V. 9
3-4
(p.363 - 367)

Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices

Authors:

Potlog, Tamara; Spalatu, Nicolae; Ciobanu, Vasile; Hiie, J.; Mere, Arvo; Mikli, V.; Valdna, V.

Summary:

In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality factor (n), the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor, both in the dark and under illumination are investigated. The solar cells with efficiency η = 5.1, 3.6, and 2.9% were grown from 3N source material. A solar cell with 3.5% efficiency was made of a 6N CdTe source. The temperature current density-voltage (J-U-T) and capacitance-voltage characteristics (C-U-T) of CdS/CdTe solar cells were measured in a temperature range of 303-383 K. For all studied cells, the diode ideality factor in the dark is much higher than 2 and the saturation current density increases under illumination, while both the series and shunt resistances decrease under illumination and temperature.

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BibTeX

@article{ibn_4295,
author = {Potlog, T.P. and Spalatu, N.N. and Ciobanu, V.G. and Hiie, J. and Mere, A. and Mikli, V. and Valdna, V.},
title = {<p>Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2010},
volume = {9 (3-4)},
pages = {363-367},
month = {Dec},
abstract = {(EN) In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 

3.5, and 2.9% are analyzed and the effects of the device parameters, such as the diode ideality 
factor (n),  the saturation current-density (Jo), and the series resistance (Rs,) on the fill factor, 
both in the dark and under illumination are investigated. The solar cells with efficiency η = 
5.1, 3.6, and 2.9% were grown from 3N source material. A solar cell with 3.5% efficiency 
was made of a 6N CdTe source. The temperature current density-voltage (J-U-T) and capacitance-voltage characteristics (C-U-T) of CdS/CdTe solar cells were measured in a temperature 
range of 303-383 K. For all studied cells, the diode ideality factor in the dark is much higher 
than 2 and the saturation current density increases under illumination, while both the series 
and shunt resistances decrease under illumination and temperature. },
url = {https://ibn.idsi.md/vizualizare_articol/4295},
}

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<dc:description xml:lang='en'>In this paper, CdS/CdTe solar cells with conversion efficiency values of η = 5.1, 3.6, 

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both in the dark and under illumination are investigated. The solar cells with efficiency η = 
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<dc:source>Moldavian Journal of the Physical Sciences 9 (3-4) 363-367</dc:source>
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“ ... ”

SM ISO690:2012

POTLOG, Tamara; SPALATU, Nicolae; CIOBANU, Vasile; HIIE, J.; MERE, Arvo; MIKLI, V.; VALDNA, V.. Analysis of fill factor losses in thin film CdS/CdTe photovoltaic devices. In: Moldavian Journal of the Physical Sciences. 2010, nr. 3-4(9), pp. 363-367. ISSN 1810-648X.