Archive: 2010 - Moldavian Journal of the Physical Sciences

05 Dec 2010

2010
V. 9
3-4
(p.339 - 344)

Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films

Authors:

Iaseniuc, Oxana; Andrieş, Andrei; Abaşkin, Vladimir

Summary:

In this work, we carried out measurements of optical constants (refractive index n, ab- sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system prepared by a conventional melt-quenching technique. Photostructural transformations in amorphous films of (As S Se ) :Sn (x = 0.01 at %) were investigated. The value of the photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); ΔE = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E = 2.09÷2.16 (±0.01) eV.

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prepared by a conventional melt-quenching technique. Photostructural transformations in 
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photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); 
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BibTeX

@article{ibn_4289,
author = {Iaseniuc, O.V. and Andrieş, A.M. and Abaşkin, V.G.},
title = {<p>Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2010},
volume = {9 (3-4)},
pages = {339-344},
month = {Dec},
abstract = {(EN) In this work, we carried out measurements of optical constants (refractive index n, ab-

sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system 
prepared by a conventional melt-quenching technique. Photostructural transformations in 
amorphous films of (As S Se ) :Sn  (x = 0.01 at %) were investigated. The value of the 
photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); 
ΔE  = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E  = 2.09÷2.16 (±0.01) eV. 
},
url = {https://ibn.idsi.md/vizualizare_articol/4289},
}

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prepared by a conventional melt-quenching technique. Photostructural transformations in 
amorphous films of (As S Se ) :Sn  (x = 0.01 at %) were investigated. The value of the 
photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); 
ΔE  = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E  = 2.09÷2.16 (±0.01) eV. 
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<dc:creator>Iaseniuc, O.V.</dc:creator>
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<dc:description xml:lang='en'>In this work, we carried out measurements of optical constants (refractive index n, ab-

sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system 
prepared by a conventional melt-quenching technique. Photostructural transformations in 
amorphous films of (As S Se ) :Sn  (x = 0.01 at %) were investigated. The value of the 
photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); 
ΔE  = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E  = 2.09÷2.16 (±0.01) eV. 
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<dc:source>Moldavian Journal of the Physical Sciences 9 (3-4) 339-344</dc:source>
<dc:title><p>Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films</p></dc:title>
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“ ... ”

SM ISO690:2012

IASENIUC, Oxana; ANDRIES, Andrei; ABASHKIN, Vladimir. Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films. In: Moldavian Journal of the Physical Sciences. 2010, nr. 3-4(9), pp. 339-344. ISSN 1810-648X.