05 Dec 2010

Unconventional metal-insulator transition in RexSi1-x

Authors:

Aruşanov, Ernest; Lisunov, Constantin; Schumann, J; Vinzellberg, H

Summary:

Low-temperature resistivity of the amorphous RexSi1-x thin films at x

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@article{ibn_4235,
author = {Aruşanov, E.C. and Lisunov, C.G. and Schumann, J. and Vinzellberg, H.},
title = {<p>Unconventional metal-insulator transition in RexSi1-x</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2010},
volume = {9 (3-4)},
pages = {252-256},
month = {Dec},
abstract = {(EN) Low-temperature resistivity of the amorphous RexSi1-x thin films at x < xc is governed 

by the Mott and the Shklovskii-Efros variable-range hopping (VRH) conductivity mecha-

nisms, where xc ≈ 0.327 corresponds to the metal-insulator transition (MIT). The critical exponent of the dielectric permittivity,  η = 2.1 ± 0.2, is found to be in agreement with the 

theoretical prediction, η = 2. The critical exponent of the correlation length, ν  ≈ 0.8 – 1.1 

close to the expected value of unity is obtained under an assumption of a strong underbarrier 
scattering of hopping charge carriers. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/4235},
}
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