Archive: 2010 - Moldavian Journal of the Physical Sciences

05 Jun 2010

2010
V. 9
2
(p.186 - 190)

Numerical modeling of detection in low temperature diode detectors

Authors:

Cherner, Iacov

Summary:

Diode detectors (DDs) are widely used in electronic information and communication systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the DD parameters is studied. Also, the numerical modeling of the electrical potential distribution and current passing in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 4.2 K are discussed. The comparison with existent literature data shows that the proposed DDs can be 10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their development is an urgent problem.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="<p>Numerical modeling of detection in low temperature diode detectors</p>">
<meta name="citation_author" content="Cherner, Iacov">
<meta name="citation_publication_date" content="2010/06/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="9">
<meta name="citation_issue" content="2">
<meta name="citation_firstpage" content="186">
<meta name="citation_lastpage" content="190">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Numerical%20modeling%20of%20detection%20in%20low%20temperature%20diode%20detectors.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-4229</doi_batch_id>
<timestamp>1597493515</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2010</year>
</publication_date>
<issue>2(9)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title><p>Numerical modeling of detection in low temperature diode detectors</p></title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Iacov</given_name>
<surname>Cherner</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2010</year>
</publication_date>
<pages>
<first_page>186</first_page>
<last_page>190</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-4229</cfResPublId>
<cfResPublDate>2010-06-05</cfResPublDate>
<cfVol>9</cfVol>
<cfIssue>2</cfIssue>
<cfStartPage>186</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2010/article/4229</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'><p>Numerical modeling of detection in low temperature diode detectors</p></cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>Diode detectors (DDs) are widely used in electronic information and communication 

systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. 
The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the 
DD parameters is studied.  
Also, the numerical modeling of the electrical potential distribution and current passing 
in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that 
operate at liquid nitrogen temperature of 4.2 K are discussed. 
The comparison with existent literature data shows that the proposed DDs can be 
10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their 
development is an urgent problem. 
  </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-06-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2010-06-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-1030</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2010-06-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-1030</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1030-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2010-06-05T24:00:00</cfStartDate>
<cfFamilyNames>Kerner</cfFamilyNames>
<cfFirstNames>Iacov</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_4229,
author = {Cherner, I.I.},
title = {<p>Numerical modeling of detection in low temperature diode detectors</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2010},
volume = {9 (2)},
pages = {186-190},
month = {Jun},
abstract = {(EN) Diode detectors (DDs) are widely used in electronic information and communication 

systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. 
The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the 
DD parameters is studied.  
Also, the numerical modeling of the electrical potential distribution and current passing 
in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that 
operate at liquid nitrogen temperature of 4.2 K are discussed. 
The comparison with existent literature data shows that the proposed DDs can be 
10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their 
development is an urgent problem. 
  },
url = {https://ibn.idsi.md/vizualizare_articol/4229},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Cherner, I.I.</creatorName>
<affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'><p>Numerical modeling of detection in low temperature diode detectors</p></title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2010</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2010-06-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>Diode detectors (DDs) are widely used in electronic information and communication 

systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. 
The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the 
DD parameters is studied.  
Also, the numerical modeling of the electrical potential distribution and current passing 
in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that 
operate at liquid nitrogen temperature of 4.2 K are discussed. 
The comparison with existent literature data shows that the proposed DDs can be 
10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their 
development is an urgent problem. 
  </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Cherner, I.I.</dc:creator>
<dc:date>2010-06-05</dc:date>
<dc:description xml:lang='en'>Diode detectors (DDs) are widely used in electronic information and communication 

systems. The numerical modeling of the electrical properties in the contacts of high temperature superconductor (HTSC) with semiconductor indium antimonite (InSb) was carried out. 
The possibilities of preparing DDs based on these contacts that operate at liquid nitrogen temperature of 77.4 K are analyzed. The influence of the densities of surface states (SSts) on the 
DD parameters is studied.  
Also, the numerical modeling of the electrical potential distribution and current passing 
in the contacts of a normal metal or a superconductor with semiconductor alloy bismuthantimony (Bi-Sb) is made. The possibilities of preparing DDs based on these contacts that 
operate at liquid nitrogen temperature of 4.2 K are discussed. 
The comparison with existent literature data shows that the proposed DDs can be 
10÷100 times better. Therefore, these DDs are promising for cryogenic electronics and their 
development is an urgent problem. 
  </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 9 (2) 186-190</dc:source>
<dc:title><p>Numerical modeling of detection in low temperature diode detectors</p></dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>