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  • Archive: 2009
05 Sep 2009
  • 2009
  • V. 8
  • 3-4
  • (p.287 - 295)

Optical and mechanical properties of long-term ordered semiconductors

Authors:

Ballato, John; Ciumanov, G; Pîşkin, Serghei; Jitaru, Raisa; Tăzlăvan, Victor; Bass, M; Turri, G

Summary:

The 45-year-monitoring of optical and mechanical properties of the various semiconductor crystals grown in the sixties of the past century shows that the stimuli for long-term improvement of crystal quality prevail over those which lead to its degradation. Evolution of optical and mechanical properties testifies that now in diamond-like gallium phosphide (GaP) doped with nitrogen (N), the impurity is a regular element of the new crystal lattice - it increases the forbidden gap, and at relevant concentration and level of optical excitation creates a bound excitonic crystal. The ternary compound CdIn2S4, now having the perfect normal (instead of partly inversed) spinel crystal lattice, as well as GaP with evenly distributed impurities, demonstrate new stable and bright luminescent phenomena, including stimulated emission and “hot” luminescence at room temperature. All chosen semiconductor crystals from different groups of semiconductor compounds demonstrate the long term ordering and improvement of useful for application properties. Existing technologies help us to reproduce artificially these naturally ordered structures for application in optoelectronics.

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Evolution of optical and mechanical properties testifies that now in diamond-like gallium phosphide (GaP) doped with nitrogen (N), the impurity is a regular element of the new 
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BibTeX

@article{ibn_4152,
author = {Ballato, J.M. and Ciumanov, G. and Pîşkin, S.L. and Jitaru, R.P. and Tăzlăvan, V.E. and Bass, M. and Turri, G.},
title = {Optical and mechanical properties of long-term ordered semiconductors},
journal = {Moldavian Journal of the Physical Sciences},
year = {2009},
volume = {8 (3-4)},
pages = {287-295},
month = {Sep},
abstract = {(EN) The 45-year-monitoring of optical and mechanical properties of the various semiconductor crystals grown in the sixties of the past century shows that the stimuli for long-term 
improvement of crystal quality prevail over those which lead to its degradation. 
Evolution of optical and mechanical properties testifies that now in diamond-like gallium phosphide (GaP) doped with nitrogen (N), the impurity is a regular element of the new 
crystal lattice - it increases the forbidden gap, and at relevant concentration and level of optical excitation creates a bound excitonic crystal. The ternary compound CdIn2S4, now having 
the perfect normal (instead of partly inversed) spinel crystal lattice, as well as GaP with 
evenly distributed impurities, demonstrate new stable and bright luminescent phenomena, 
including stimulated emission and “hot” luminescence at room temperature. All chosen semiconductor crystals from different groups of semiconductor compounds demonstrate the long term ordering and improvement of useful for application properties. 
Existing technologies help us to reproduce artificially these naturally ordered structures 
for application in optoelectronics. 
},
url = {https://ibn.idsi.md/vizualizare_articol/4152},
}

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Evolution of optical and mechanical properties testifies that now in diamond-like gallium phosphide (GaP) doped with nitrogen (N), the impurity is a regular element of the new 
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the perfect normal (instead of partly inversed) spinel crystal lattice, as well as GaP with 
evenly distributed impurities, demonstrate new stable and bright luminescent phenomena, 
including stimulated emission and “hot” luminescence at room temperature. All chosen semiconductor crystals from different groups of semiconductor compounds demonstrate the long term ordering and improvement of useful for application properties. 
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<dc:description xml:lang='en'>The 45-year-monitoring of optical and mechanical properties of the various semiconductor crystals grown in the sixties of the past century shows that the stimuli for long-term 
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Evolution of optical and mechanical properties testifies that now in diamond-like gallium phosphide (GaP) doped with nitrogen (N), the impurity is a regular element of the new 
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the perfect normal (instead of partly inversed) spinel crystal lattice, as well as GaP with 
evenly distributed impurities, demonstrate new stable and bright luminescent phenomena, 
including stimulated emission and “hot” luminescence at room temperature. All chosen semiconductor crystals from different groups of semiconductor compounds demonstrate the long term ordering and improvement of useful for application properties. 
Existing technologies help us to reproduce artificially these naturally ordered structures 
for application in optoelectronics. 
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<dc:source>Moldavian Journal of the Physical Sciences 8 (3-4) 287-295</dc:source>
<dc:title>Optical and mechanical properties of long-term ordered semiconductors</dc:title>
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BALLATO, John; CIUMANOV, G; PÎŞKIN, Serghei; JITARU, Raisa; TĂZLĂVAN, Victor; BASS, M; TURRI, G. Optical and mechanical properties of long-term ordered semiconductors. In: Moldavian Journal of the Physical Sciences. 2009, nr. 3-4(8), pp. 287-295. ISSN 1810-648X.

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