Archive: 2009 - Moldavian Journal of the Physical Sciences

05 May 2009

2009
V. 8
2
(p.195 - 200)

Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics

Authors:

Usatîi, Iurie; Mercaldo, L; Veneri, P; Privato, Carlo

Summary:

Silicon nanostructures have interesting possible applications in third generation photo- voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a high-temperature post-deposition annealing. Here we report on the spontaneous growth of silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition (PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence (PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated.

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BibTeX

@article{ibn_4051,
author = {Usatîi, I.V. and Mercaldo, L. and Veneri, P. and Privato, C.},
title = {Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics},
journal = {Moldavian Journal of the Physical Sciences},
year = {2009},
volume = {8 (2)},
pages = {195-200},
month = {May},
abstract = {(EN) Silicon nanostructures have interesting possible applications in third generation photo-

voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a 
high-temperature post-deposition annealing. Here we report on the spontaneous growth of 
silicon quantum dots in silicon nitride films by plasma enhanced chemical vapour deposition 
(PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence 
(PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the 
gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated. },
url = {https://ibn.idsi.md/vizualizare_articol/4051},
}

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Dublin Core

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<dc:creator>Usatîi, I.V.</dc:creator>
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<dc:description xml:lang='en'>Silicon nanostructures have interesting possible applications in third generation photo-

voltaics. The fabrication techniques for Si quantum dots in dielectric matrix usually involve a 
high-temperature post-deposition annealing. Here we report on the spontaneous growth of 
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(PECVD) at 300°C using two different gas mixtures. Room temperature photoluminescence 
(PL) has been observed, and tuning of PL emission has been demonstrated by adjusting the 
gas flow rates. The effect of the strongly absorbing Si nanostructures in the silicon nitride matrix on the absorption properties has been also investigated. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 8 (2) 195-200</dc:source>
<dc:title>Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics</dc:title>
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“ ... ”

SM ISO690:2012

USATÎI, Iurie; MERCALDO, L; VENERI, P; PRIVATO, Carlo. Pecvd in-situ growth of silicon quantum dots in dielectric matrix for third generation photovoltaics. In: Moldavian Journal of the Physical Sciences. 2009, nr. 2(8), pp. 195-200. ISSN 1810-648X.