05 May 2009

Excitonic absorption of the light in heterojunctions Bi2O3-InSe

Authors:

Evtodiev, Igor

Summary:

The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the Brillouin zone, and is equal to 2.557 eV at 78 K.

Download PDF

Export Metadata

<meta name="citation_title" content="Excitonic absorption of the light in heterojunctions Bi2O3-InSe ">
<meta name="citation_author" content="Evtodiev, Igor">
<meta name="citation_publication_date" content="2009/05/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="8">
<meta name="citation_issue" content="2">
<meta name="citation_firstpage" content="163">
<meta name="citation_lastpage" content="168">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Excitonic%20absorption%20of%20the%20light%20in%20heterojunctions%20Bi2O3_InSe.pdf">

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-4045</doi_batch_id>
<timestamp>1597494728</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2009</year>
</publication_date>
<issue>2(8)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>Excitonic absorption of the light in heterojunctions Bi2O3-InSe </title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Igor</given_name>
<surname>Evtodiev</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2009</year>
</publication_date>
<pages>
<first_page>163</first_page>
<last_page>168</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>
<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-4045</cfResPublId>
<cfResPublDate>2009-05-05</cfResPublDate>
<cfVol>8</cfVol>
<cfIssue>2</cfIssue>
<cfStartPage>163</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2009/article/4045</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'>Excitonic absorption of the light in heterojunctions Bi2O3-InSe </cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated 

using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd 

interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 

1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the 
Brillouin zone, and is equal to 2.557 eV at 78 K. </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2009-05-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2009-05-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-238</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2009-05-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-238</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-238-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2009-05-05T24:00:00</cfStartDate>
<cfFamilyNames>Evtodiev</cfFamilyNames>
<cfFirstNames>Igor</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>
@article{ibn_4045,
author = {Evtodiev, I.A.},
title = {Excitonic absorption of the light in heterojunctions Bi2O3-InSe },
journal = {Moldavian Journal of the Physical Sciences},
year = {2009},
volume = {8 (2)},
pages = {163-168},
month = {May},
abstract = {(EN) The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated 

using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd 

interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 

1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the 
Brillouin zone, and is equal to 2.557 eV at 78 K. },
url = {https://ibn.idsi.md/vizualizare_articol/4045},
}
<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Evtodiev, I.A.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Excitonic absorption of the light in heterojunctions Bi2O3-InSe </title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2009</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2009-05-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated 

using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd 

interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 

1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the 
Brillouin zone, and is equal to 2.557 eV at 78 K. </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>
<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Evtodiev, I.A.</dc:creator>
<dc:date>2009-05-05</dc:date>
<dc:description xml:lang='en'>The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated 

using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd 

interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at 

1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the 
Brillouin zone, and is equal to 2.557 eV at 78 K. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 8 (2) 163-168</dc:source>
<dc:title>Excitonic absorption of the light in heterojunctions Bi2O3-InSe </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>