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  • Archive: 2009
05 Feb 2009
  • 2009
  • V. 8
  • 1
  • (p.54 - 62)

Optical properties and electronic structure of polycrystalline Cu-(In Ga)-Se alloys

Authors:

Leon, Maximo; Levcenco, Sergiu; Merino, Jose Manuel; Friedrich, E.; Aruşanov, Ernest

Summary:

The optical properties of bulk Cu-(In Ga )-Se alloys grown by the Bridgman metho are presented. The optical measurements were performed at room temperature in the photo energy range from 0.8 to 4.7eV using a variable-angle spectroscopic ellipsometer. The spec tral dependences of the complex dielectric function, the refractive index, the absorption coe ficient and the normal-incidence reflectivity were derived. The observed structures attribute to the interband transitions E0 , E1A , and E1B were modelled using a modification of the Ada chi’s model. The model parameters were determined using the simulated annealing (SA) algo rithm. The values of E0 and E1A were found to increase linearly with Ga content.

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BibTeX

@article{ibn_4020,
author = {Leon, M. and Levcenco, S.V. and Merino, J. and Friedrich, E.J. and Aruşanov, E.C.},
title = {<p>Optical properties and electronic structure of polycrystalline Cu-(In Ga)-Se alloys</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2009},
volume = {8 (1)},
pages = {54-62},
month = {Feb},
abstract = {(EN) The optical properties of bulk Cu-(In Ga )-Se alloys grown by the Bridgman metho

are presented. The optical measurements were performed at room temperature in the photo
 energy range from 0.8 to 4.7eV using a variable-angle spectroscopic ellipsometer. The spec
tral dependences of the complex dielectric function, the refractive index, the absorption coe
ficient and the normal-incidence reflectivity were derived. The observed structures attribute
 to the interband transitions E0 , E1A , and E1B were modelled using a modification of the Ada
 chi’s model. The model parameters were determined using the simulated annealing (SA) algo
rithm. The values of E0  and E1A  were found to increase linearly with Ga content.  },
url = {https://ibn.idsi.md/vizualizare_articol/4020},
}

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ficient and the normal-incidence reflectivity were derived. The observed structures attribute
 to the interband transitions E0 , E1A , and E1B were modelled using a modification of the Ada
 chi’s model. The model parameters were determined using the simulated annealing (SA) algo
rithm. The values of E0  and E1A  were found to increase linearly with Ga content.  </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 8 (1) 54-62</dc:source>
<dc:title><p>Optical properties and electronic structure of polycrystalline Cu-(In Ga)-Se alloys</p></dc:title>
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LEON, Maximo; LEVCENKO, Sergiu; MERINO, Jose Manuel; FRIEDRICH, E.; ARUSHANOV, Ernest. Optical properties and electronic structure of polycrystalline Cu-(In Ga)-Se alloys. In: Moldavian Journal of the Physical Sciences. 2009, nr. 1(8), pp. 54-62. ISSN 1810-648X.

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