Archive: 2009 - Moldavian Journal of the Physical Sciences

05 Feb 2009

2009
V. 8
1
(p.49 - 53)

Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn

Authors:

Aruşanov, Ernest; Lisunov, Constantin; Vinzellberg, H; Behr, G; Schumann, J; Schmidt, Oliver

Summary:

Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii- Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the universal scaling behavior of the resistivity. The characteristic and transition temperatures and widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are obtained, indicating existence of a rigid gap, δ, in the spectrum of DOS, in addition to Δ, which points out to the polaronic nature of the charge carriers in the investigated compound.

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BibTeX

@article{ibn_4017,
author = {Aruşanov, E.C. and Lisunov, C.G. and Vinzellberg, H. and Behr, G. and Schumann, J. and Schmidt, O.G.},
title = {<p>Hopping conductivity and spectrum of localized carriers in &beta;-FeSi:Mn</p>},
journal = {Moldavian Journal of the Physical Sciences},
year = {2009},
volume = {8 (1)},
pages = {49-53},
month = {Feb},
abstract = {(EN) Resistivity measurements of Mn-doped p-type β-FeSi2 single crystals are presented and 

analyzed with the different hopping conductivity models. Both the Mott and the Shklovskii-
Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the 
universal scaling behavior of the resistivity. The characteristic and transition temperatures and 
widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are 
obtained, indicating existence of a rigid gap,  δ, in the spectrum of DOS, in addition to Δ, 
which points out to the polaronic nature of the charge carriers in the investigated compound.  
 },
url = {https://ibn.idsi.md/vizualizare_articol/4017},
}

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<affiliation>Institute for Integrative Nanosciences,IFW Dresden, Germania</affiliation>
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<titles>
<title xml:lang='en'><p>Hopping conductivity and spectrum of localized carriers in &beta;-FeSi:Mn</p></title>
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Efros regimes of the variable-range hopping (VRH) conductivity are observed as well as the 
universal scaling behavior of the resistivity. The characteristic and transition temperatures and 
widths of the impurity band and of the Coulomb gap, Δ, in the density of states (DOS) are 
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“ ... ”

SM ISO690:2012

ARUSHANOV, Ernest; LISUNOV, Konstantin; VINZELLBERG, H; BEHR, G; SCHUMANN, J; SCHMIDT, Oliver. Hopping conductivity and spectrum of localized carriers in β-FeSi:Mn. In: Moldavian Journal of the Physical Sciences. 2009, nr. 1(8), pp. 49-53. ISSN 1810-648X.