Archive: 2008 - Moldavian Journal of the Physical Sciences

05 Oct 2008

2008
V. 7
4
(p.476 - 480)

Thin AIN films growth on Si (III) by hydride vapor phase epitaxy

Authors:

Gorceac, Leonid; Davîdov, V.; Jiliaev, Iu.; Botnariuc, Vasile; Raevschi, Simion

Summary:

Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) method in a horizontal quartz reactor. The surface of layers has been studied by scanning lectron microscopy and by the Raman spectroscopy method and found to have the structured morphology. It has been determined that the layers have high specific electrical resistance and are strained in the plane of the substrate.

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BibTeX

@article{ibn_3957,
author = {Gorceac, L. and Davîdov, V. and Jiliaev, I. and Botnariuc, V.F. and Raevschi, S.D.},
title = {Thin AIN films growth on Si (III) by hydride vapor phase epitaxy  },
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (4)},
pages = {476-480},
month = {Oct},
abstract = {(EN) Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE) 

method in a horizontal quartz reactor. The surface of layers has been studied by scanning 
lectron microscopy and by the Raman spectroscopy method and found to have the structured 
morphology. It has been determined that the layers have high specific electrical resistance and 
are strained in the plane of the substrate. },
url = {https://ibn.idsi.md/vizualizare_articol/3957},
}

DataCite

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Dublin Core

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lectron microscopy and by the Raman spectroscopy method and found to have the structured 
morphology. It has been determined that the layers have high specific electrical resistance and 
are strained in the plane of the substrate. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 7 (4) 476-480</dc:source>
<dc:title>Thin AIN films growth on Si (III) by hydride vapor phase epitaxy  </dc:title>
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“ ... ”

SM ISO690:2012

GORCEAC, Leonid; DAVÎDOV, V.; JILIAEV, Iu.; BOTNARIUC, Vasile; RAEVSCHI, Simion. Thin AIN films growth on Si (III) by hydride vapor phase epitaxy . In: Moldavian Journal of the Physical Sciences. 2008, nr. 4(7), pp. 476-480. ISSN 1810-648X.