Archive: 2008 - Moldavian Journal of the Physical Sciences

05 Oct 2008

2008
V. 7
4
(p.471 - 475)

The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions

Authors:

Goglidze, Tatiana; Dementiev, Igor; Dmitriev, Serghei; Nasedchina, Nadejda

Summary:

In the given paper we present results of I-V characterization of thin film heterojunctions on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous рAs2Se3 layers. The possible mechanisms of the current passing through obtained structure are discussed on the basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="The electrical transport mechanism in the 
(nCdS–рAs2Se3) heterojunctions
">
<meta name="citation_author" content="Goglidze, Tatiana">
<meta name="citation_author" content="Dementiev, Igor">
<meta name="citation_author" content="Dmitriev, Serghei">
<meta name="citation_author" content="Nasedchina, Nadejda">
<meta name="citation_publication_date" content="2008/10/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="7">
<meta name="citation_issue" content="4">
<meta name="citation_firstpage" content="471">
<meta name="citation_lastpage" content="475">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/The%20electrical%20transport%20mechanism.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-3952</doi_batch_id>
<timestamp>1597496072</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2008</year>
</publication_date>
<issue>4(7)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>The electrical transport mechanism in the 
(nCdS–рAs2Se3) heterojunctions
</title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Tatiana</given_name>
<surname>Goglidze</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Igor</given_name>
<surname>Dementiev</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Serghei</given_name>
<surname>Dmitriev</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Nadejda</given_name>
<surname>Nasedchina</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2008</year>
</publication_date>
<pages>
<first_page>471</first_page>
<last_page>475</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-3952</cfResPublId>
<cfResPublDate>2008-10-05</cfResPublDate>
<cfVol>7</cfVol>
<cfIssue>4</cfIssue>
<cfStartPage>471</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2008/article/3952</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'>The electrical transport mechanism in the 
(nCdS–рAs2Se3) heterojunctions
</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>In the given paper we present results of I-V characterization of thin film heterojunctions 

on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous  рAs2Se3 layers. The possible mechanisms of the current passing 
through obtained structure are discussed on the  basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.  </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-13348</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-1003</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-1006</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-13334</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-13348</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-13348-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
<cfFamilyNames>Гоглидзе</cfFamilyNames>
<cfFirstNames>Татьяна</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-1003</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1003-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
<cfFamilyNames>Дементьев</cfFamilyNames>
<cfFirstNames>Игорь</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-1006</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1006-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
<cfFamilyNames>Дмитриев</cfFamilyNames>
<cfFirstNames>Сергей</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-13334</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-13334-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2008-10-05T24:00:00</cfStartDate>
<cfFamilyNames>Наседкина</cfFamilyNames>
<cfFirstNames>Надежда</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_3952,
author = {Goglidze, T.I. and Dementiev, I.V. and Dmitriev, S. and Nasedchina, N.},
title = {The electrical transport mechanism in the 
(nCdS–рAs2Se3) heterojunctions
},
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (4)},
pages = {471-475},
month = {Oct},
abstract = {(EN) In the given paper we present results of I-V characterization of thin film heterojunctions 

on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous  рAs2Se3 layers. The possible mechanisms of the current passing 
through obtained structure are discussed on the  basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.  },
url = {https://ibn.idsi.md/vizualizare_articol/3952},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Goglidze, T.I.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Dementiev, I.V.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Dmitriev, S.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Nasedchina, N.</creatorName>
<affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>The electrical transport mechanism in the 
(nCdS–рAs2Se3) heterojunctions
</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2008</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2008-10-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>In the given paper we present results of I-V characterization of thin film heterojunctions 

on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous  рAs2Se3 layers. The possible mechanisms of the current passing 
through obtained structure are discussed on the  basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.  </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Goglidze, T.I.</dc:creator>
<dc:creator>Dementiev, I.V.</dc:creator>
<dc:creator>Dmitriev, S.</dc:creator>
<dc:creator>Nasedchina, N.</dc:creator>
<dc:date>2008-10-05</dc:date>
<dc:description xml:lang='en'>In the given paper we present results of I-V characterization of thin film heterojunctions 

on the basis of (nCdS)–(рAs2Se3). Structures have been obtained via spray pyrolysis deposition of polycrystalline nCdS layers on glass substrate and consecutive thermal vacuum deposition of the amorphous  рAs2Se3 layers. The possible mechanisms of the current passing 
through obtained structure are discussed on the  basis of results of I-V measurements performed at the different polarities and electrical field intensities in the heterojunction.  </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 7 (4) 471-475</dc:source>
<dc:title>The electrical transport mechanism in the 
(nCdS–рAs2Se3) heterojunctions
</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

GOGLIDZE, Tatiana; DEMENTIEV, Igor; DMITRIEV, Serghei; NASEDCHINA, Nadejda. The electrical transport mechanism in the (nCdS–рAs2Se3) heterojunctions . In: Moldavian Journal of the Physical Sciences. 2008, nr. 4(7), pp. 471-475. ISSN 1810-648X.