05 Oct 2008

Nanoindentation response of semiconductors

Authors:

LeBourhis, E.; Patriarche, G.

Summary:

The paper reviews the nanoindentation behaviour of semiconductors under concentrated load. We consider first, fundamental aspects regarding the mechanical resistance to contact loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summarizes recent studies regarding nanoindentation structure and geometrical size effect.

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author = {LeBourhis, E. and Patriarche, G.},
title = {Nanoindentation response of semiconductors},
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (4)},
pages = {456-465},
month = {Oct},
abstract = {(EN) The paper reviews the nanoindentation behaviour of semiconductors under concentrated 
load. We consider first, fundamental aspects  regarding the mechanical resistance to contact 
loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summarizes recent studies regarding nanoindentation structure and 
geometrical size effect. 
},
url = {https://ibn.idsi.md/vizualizare_articol/3945},
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