Archive: 2008 - Moldavian Journal of the Physical Sciences

05 Apr 2008

2008
V. 7
2
(p.158 - 163)

Thermoelectric power in single crystal microwires of PbTe.

Authors:

Canţer, Valeriu; Zasaviţchi, Efim

Summary:

Results of the measurements of thermoelectric properties of thin semiconductor mi- crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For the all samples, a sharp peak at the temperature 30 TK ≈ is observed. The value of this peak depends on diameter of microwires. It is supposed that at the temperatures below 40 K the total thermoelectric power is determined to a certain degree by the phonon drag of holes and dependence of the thermoelectric power value is caused by the size effect.

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<meta name="citation_title" content="Thermoelectric power in single crystal microwires of PbTe. ">
<meta name="citation_author" content="Canţer, Valeriu">
<meta name="citation_author" content="Zasaviţchi, Efim">
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Crossref

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BibTeX

@article{ibn_3796,
author = {Canţer, V.G. and Zasaviţchi, E.A.},
title = {Thermoelectric power in single crystal microwires of PbTe. },
journal = {Moldavian Journal of the Physical Sciences},
year = {2008},
volume = {7 (2)},
pages = {158-163},
month = {Apr},
abstract = {(EN) Results of the measurements of thermoelectric properties of thin semiconductor mi-

crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling 
followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For 
the all samples, a sharp peak at the temperature  30 TK ≈ is observed. The value of this peak 
depends on diameter of microwires. It is supposed that at the temperatures below 40 K the total 
thermoelectric power is determined to a certain degree by the phonon drag of holes and dependence of the thermoelectric power value is caused by the size effect. },
url = {https://ibn.idsi.md/vizualizare_articol/3796},
}

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Dublin Core

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<dc:description xml:lang='en'>Results of the measurements of thermoelectric properties of thin semiconductor mi-

crowires of PbTe (d = 5 ÷ 100 μm) obtained from solution melt by the quartz capillary filling 
followed by material crystallization are presented for the temperature region 4.2 ÷ 300 K. For 
the all samples, a sharp peak at the temperature  30 TK ≈ is observed. The value of this peak 
depends on diameter of microwires. It is supposed that at the temperatures below 40 K the total 
thermoelectric power is determined to a certain degree by the phonon drag of holes and dependence of the thermoelectric power value is caused by the size effect. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 7 (2) 158-163</dc:source>
<dc:title>Thermoelectric power in single crystal microwires of PbTe. </dc:title>
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