Indentation size effect in ITO/Si planar structure under concentrated load action
Authors:
Harea, Evghenii
Summary:
For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique
of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure-
ments of microhardness of these structures have shown results varying over a wide range in
dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being
characteristic of film structures is proposed.
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<meta name="citation_title" content="Indentation size effect in ITO/Si planar structure under concentrated load action"> <meta name="citation_author" content="Harea, Evghenii"> <meta name="citation_publication_date" content="2007/05/05"> <meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences"> <meta name="citation_volume" content="6"> <meta name="citation_issue" content="2"> <meta name="citation_firstpage" content="228"> <meta name="citation_lastpage" content="232"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Indentation%20size%20effect%20in%20ITOSi%20planar%20structure%20under%20concentrated%20load%20action.pdf">
Crossref
<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-3723</doi_batch_id> <timestamp>1597497970</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>mjps@nanotech.md</email_address> </depositor> <registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant> </head> <body> <journal> <journal_metadata> <full_title>Moldavian Journal of the Physical Sciences</full_title> <issn media_type='print'>1810648X</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2007</year> </publication_date> <issue>2(6)</issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>Indentation size effect in ITO/Si planar structure under concentrated load action</title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Evghenii</given_name> <surname>Harea</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2007</year> </publication_date> <pages> <first_page>228</first_page> <last_page>232</last_page> </pages> </journal_article> </journal> </body> </doi_batch>
CERIF
<?xml version='1.0' encoding='utf-8'?> <CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'> <cfResPubl> <cfResPublId>ibn-ResPubl-3723</cfResPublId> <cfResPublDate>2007-05-05</cfResPublDate> <cfVol>6</cfVol> <cfIssue>2</cfIssue> <cfStartPage>228</cfStartPage> <cfISSN>1810-648X</cfISSN> <cfURI>http://mjps.utm.md/archive/2007/article/3723</cfURI> <cfTitle cfLangCode='RO' cfTrans='o'>Indentation size effect in ITO/Si planar structure under concentrated load action</cfTitle> <cfAbstr cfLangCode='EN' cfTrans='o'>For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed. </cfAbstr> <cfResPubl_Class> <cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId> <cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId> <cfStartDate>2007-05-05T24:00:00</cfStartDate> </cfResPubl_Class> <cfResPubl_Class> <cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId> <cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId> <cfStartDate>2007-05-05T24:00:00</cfStartDate> </cfResPubl_Class> <cfPers_ResPubl> <cfPersId>ibn-person-13205</cfPersId> <cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId> <cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId> <cfStartDate>2007-05-05T24:00:00</cfStartDate> </cfPers_ResPubl> </cfResPubl> <cfPers> <cfPersId>ibn-Pers-13205</cfPersId> <cfPersName_Pers> <cfPersNameId>ibn-PersName-13205-2</cfPersNameId> <cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId> <cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId> <cfStartDate>2007-05-05T24:00:00</cfStartDate> <cfFamilyNames>Harea</cfFamilyNames> <cfFirstNames>Evghenii</cfFirstNames> <cfFamilyNames>Харя</cfFamilyNames> <cfFirstNames>Евгений</cfFirstNames> </cfPersName_Pers> </cfPers> </CERIF>
BibTeX
@article{ibn_3723,
author = {Harea, E.E.},
title = {Indentation size effect in ITO/Si planar structure under concentrated load action},
journal = {Moldavian Journal of the Physical Sciences},
year = {2007},
volume = {6 (2)},
pages = {228-232},
month = {May},
abstract = {(EN) For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique
of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure-
ments of microhardness of these structures have shown results varying over a wide range in
dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being
characteristic of film structures is proposed. },
url = {https://ibn.idsi.md/vizualizare_articol/3723},
}
DataCite
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <creators> <creator> <creatorName>Harea, E.E.</creatorName> <affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='ro'>Indentation size effect in ITO/Si planar structure under concentrated load action</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2007</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier> <dates> <date dateType='Issued'>2007-05-05</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'>For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed. </description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>
Dublin Core
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Harea, E.E.</dc:creator> <dc:date>2007-05-05</dc:date> <dc:description xml:lang='en'>For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed. </dc:description> <dc:source>Moldavian Journal of the Physical Sciences 6 (2) 228-232</dc:source> <dc:title>Indentation size effect in ITO/Si planar structure under concentrated load action</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>