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  • Archive: 2007
05 May 2007
  • 2007
  • V. 6
  • 2
  • (p.228 - 232)

Indentation size effect in ITO/Si planar structure under concentrated load action

Authors:

Harea, Evghenii

Summary:

For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure- ments of microhardness of these structures have shown results varying over a wide range in dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being characteristic of film structures is proposed.

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BibTeX

@article{ibn_3723,
author = {Harea, E.E.},
title = {Indentation size effect in ITO/Si planar structure under concentrated load action},
journal = {Moldavian Journal of the Physical Sciences},
year = {2007},
volume = {6 (2)},
pages = {228-232},
month = {May},
abstract = {(EN) For studying strength properties of planar structures ITO (In2O3·SnO2)/Si the technique 

of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure-

ments of microhardness of these structures have shown results varying over a wide range in 
dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being 
characteristic of film structures is proposed.  },
url = {https://ibn.idsi.md/vizualizare_articol/3723},
}

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of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure-

ments of microhardness of these structures have shown results varying over a wide range in 
dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being 
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Dublin Core

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of Vickers pyramid microindentation for the load range of 0.2-1.5 N was applied. Measure-

ments of microhardness of these structures have shown results varying over a wide range in 
dependence on film thickness and applied load, this can be explained by the size effect presence. In addition to well known factors causing the size effect, another explanation being 
characteristic of film structures is proposed.  </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 6 (2) 228-232</dc:source>
<dc:title>Indentation size effect in ITO/Si planar structure under concentrated load action</dc:title>
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SM ISO690:2012

HAREA, Evghenii. Indentation size effect in ITO/Si planar structure under concentrated load action. In: Moldavian Journal of the Physical Sciences. 2007, nr. 2(6), pp. 228-232. ISSN 1810-648X.

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