Archive: 2007 - Moldavian Journal of the Physical Sciences

05 May 2007

2007
V. 6
2
(p.142 - 147)

Semiconductor-oxide nanocomposites based on porous semiconductors

Authors:

Hmelevschi, Leonid; Tighineanu, Ion; Ursachi, Veaceslav; Dolgaleva, Ksenia; Boyd, Robert W.

Summary:

Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 900 o C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on GaAs templates. 4f-4f intrashell transitions in Eu3 and Er3 ions assure strong red and green emission from these nanophases.

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<meta name="citation_author" content="Hmelevschi, Leonid">
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BibTeX

@article{ibn_3703,
author = {Hmelevschi, L. and Tighineanu, I.M. and Ursachi, V.V. and Dolgaleva, K.P. and Boyd, R.},
title = {Semiconductor-oxide nanocomposites based on 
porous semiconductors},
journal = {Moldavian Journal of the Physical Sciences},
year = {2007},
volume = {6 (2)},
pages = {142-147},
month = {May},
abstract = {(EN) Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs 

templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by 
GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 
900 o
C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH 
solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in 
composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on 
GaAs templates. 4f-4f intrashell transitions in Eu3 
 and Er3 
 ions assure strong red and green 
emission from these nanophases. },
url = {https://ibn.idsi.md/vizualizare_articol/3703},
}

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900 o
C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH 
solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in 
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<dc:creator>Ursachi, V.V.</dc:creator>
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<dc:date>2007-05-05</dc:date>
<dc:description xml:lang='en'>Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs 

templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by 
GaPO4 and Ga2O3 structures, respectively, during annealing at emperatures from 500 to 
900 o
C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH 
solutions results in the formation of lanthanide containing oxide microcrystals finely dispersed into the native oxide matrix. These oxide phases are found to be EuPO4 and ErPO4 in 
composites obtained on GaP templates, and EuAsO4 and ErAsO4 in composites prepared on 
GaAs templates. 4f-4f intrashell transitions in Eu3 
 and Er3 
 ions assure strong red and green 
emission from these nanophases. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 6 (2) 142-147</dc:source>
<dc:title>Semiconductor-oxide nanocomposites based on 
porous semiconductors</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
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“ ... ”

SM ISO690:2012

HMELEVSCHI, Leonid; TIGHINEANU, Ion; URSACHI, Veaceslav; DOLGALEVA, Ksenia; BOYD, Robert W.. Semiconductor-oxide nanocomposites based on porous semiconductors. In: Moldavian Journal of the Physical Sciences. 2007, nr. 2(6), pp. 142-147. ISSN 1810-648X.