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  • Archive: 2007
05 Jan 2007
  • 2007
  • V. 6
  • 1
  • (p.62 - 66)

Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr

Authors:

Skipetrov, E.; Plastun, A.; Kovalev, B.; Skipetrova, L.; Topcevskaia, T.; Sliniko, V.

Summary:

The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built.

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BibTeX

@article{ibn_3685,
author = {Skipetrov, E.P. and Plastun, A.A. and Kovalev, B.B. and Skipetrova, L.A. and Topcevskaia, T.A. and Sliniko, V.E.},
title = {Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr},
journal = {Moldavian Journal of the Physical Sciences},
year = {2007},
volume = {6 (1)},
pages = {62-66},
month = {Jan},
abstract = {(EN) The galvanomagnetic effects ( ≤0.1 T, 4.2≤ ≤300 K) in the  -Pb1-xGexTe:Cr alloys under variation of alloy composition (0.02≤x≤0.10) and under hydrostatic compression up to 

17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression 
in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of 
two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure 
coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/3685},
}

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17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression 
in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of 
two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure 
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17 kbar have been investigated. The metal-insulator transition under the increase of germanium content in the alloys and insulator-metal transition, induced by hydrostatic compression 
in Pb1-xGexTe:Cr (x=0.10) alloy, were revealed. Using the experimental data in the frame of 
two-band Kane dispersion relation the composition and pressure dependences of the free electron concentration and the Fermi level position were calculated. The composition and pressure 
coefficients of the chromium deep level movement were obtained and the models of the electronic structure reconstruction were built. 
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<dc:source>Moldavian Journal of the Physical Sciences 6 (1) 62-66</dc:source>
<dc:title>Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr</dc:title>
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SKIPETROV, E.; PLASTUN, A.; KOVALEV, B.; SKIPETROVA, L.; TOPCEVSKAIA, T.; SLINIKO, V.. Electronic structure of diluted magnetic semiconductors Pb1-xGexTe:Cr. In: Moldavian Journal of the Physical Sciences. 2007, nr. 1(6), pp. 62-66. ISSN 1810-648X.

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