05 Dec 2006

GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns

Authors:

Lupu, Andrei

Summary:

GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue- shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts.

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<meta name="citation_author" content="Lupu, Andrei">
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@article{ibn_3591,
author = {Lupu, A.M.},
title = {GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns},
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (3-4)},
pages = {349-354},
month = {Dec},
abstract = {(EN) GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane 

carrier transport in the wetting layer have been fabricated and characterized. The devices are 
operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue-
shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts.  },
url = {https://ibn.idsi.md/vizualizare_articol/3591},
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operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue-
shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts.  </description>
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