Archive: 2006 - Moldavian Journal of the Physical Sciences

05 Dec 2006

2006
V. 5
3-4
(p.298 - 303)

Relaxation processes under microindentation of InP crystals subjected to scratching deformation

Authors:

Jitaru, Raisa; Rahvalov, Veaceslav

Summary:

The elastic strain relaxation was estimated by the use of the method of acoustic emis- sion signal registration under microindentation. The coefficient K for the estimation of relaxation degree under unloading was introduced. The preliminary strain degree of InP single crystals and accordingly the internal stresses were varied by the scratching method as well as by the testing temperature (293÷723 K) and storage of predeformed crystals at room temperature. It was shown that the relaxation processes are determined by the stress defect structure state and are the predeformation temperature function. These processes are tightly related to the internal strain stress, characterizing the start state of InP single crystals.

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<meta name="citation_author" content="Rahvalov, Veaceslav">
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BibTeX

@article{ibn_3520,
author = {Jitaru, R.P. and Rahvalov, V.},
title = {Relaxation processes under microindentation of InP crystals subjected to scratching deformation },
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (3-4)},
pages = {298-303},
month = {Dec},
abstract = {(EN) The elastic strain relaxation was estimated by the use of the method of acoustic emis-

sion signal registration under microindentation. The coefficient K for the estimation of relaxation degree under unloading was introduced. The preliminary strain degree of InP single 
crystals and accordingly the internal stresses were varied by the scratching method as well as 
by the testing temperature (293÷723 K) and storage of predeformed crystals at room temperature. 
It was shown that the relaxation processes are determined by the stress defect structure 
state and are the predeformation temperature function. These processes are tightly related to 
the internal strain stress, characterizing the start state of InP single crystals. },
url = {https://ibn.idsi.md/vizualizare_articol/3520},
}

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by the testing temperature (293÷723 K) and storage of predeformed crystals at room temperature. 
It was shown that the relaxation processes are determined by the stress defect structure 
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sion signal registration under microindentation. The coefficient K for the estimation of relaxation degree under unloading was introduced. The preliminary strain degree of InP single 
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by the testing temperature (293÷723 K) and storage of predeformed crystals at room temperature. 
It was shown that the relaxation processes are determined by the stress defect structure 
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<dc:source>Moldavian Journal of the Physical Sciences 5 (3-4) 298-303</dc:source>
<dc:title>Relaxation processes under microindentation of InP crystals subjected to scratching deformation </dc:title>
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“ ... ”

SM ISO690:2012

JITARU, Raisa; RAHVALOV, Veaceslav. Relaxation processes under microindentation of InP crystals subjected to scratching deformation . In: Moldavian Journal of the Physical Sciences. 2006, nr. 3-4(5), pp. 298-303. ISSN 1810-648X.