Archive: 2006 - Moldavian Journal of the Physical Sciences

05 Jan 2006

2006
V. 5
1
(p.88 - 96)

Lead chalcogenide IR-emitters and detectors on Si-substrates

Authors:

Zogg, H.; Arnold, M.; Zimin, D.; Alchalabi, K.

Summary:

Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant advantages with respect to size, costs and thermal conductivities. In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very high index contrast between IV-VI materials (nH = 4-5) and BaF2 (nL=1.43). A few pairs of quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%. We review some of our results for different devices: Infrared sensor arrays for thermal imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW (quantum well) lasers on Si substrates and “wavelength transformers”, VCSEL (vertical cavity surface emitting laser) structures operated in sub-threshold.

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advantages with respect to size, costs and thermal conductivities.  

In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very 

high index contrast between IV-VI materials (nH =  4-5) and BaF2 (nL=1.43). A few pairs of 
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We review some of our results for different devices: Infrared sensor arrays for thermal 

imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), 

optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW 

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BibTeX

@article{ibn_3423,
author = {Zogg, H. and Arnold, M. and Zimin, D. and Alchalabi, K.},
title = {Lead chalcogenide IR-emitters and detectors on Si-substrates
},
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (1)},
pages = {88-96},
month = {Jan},
abstract = {(EN) Narrow gap IV-VI (lead chalcogenide) compounds are employed since long time as 

mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This 

allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant 
advantages with respect to size, costs and thermal conductivities.  

In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very 

high index contrast between IV-VI materials (nH =  4-5) and BaF2 (nL=1.43). A few pairs of 
quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%.  

We review some of our results for different devices: Infrared sensor arrays for thermal 

imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), 

optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW 

(quantum well) lasers on Si substrates and “wavelength transformers”, VCSEL (vertical 

cavity surface emitting laser) structures operated in sub-threshold. },
url = {https://ibn.idsi.md/vizualizare_articol/3423},
}

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advantages with respect to size, costs and thermal conductivities.  

In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very 

high index contrast between IV-VI materials (nH =  4-5) and BaF2 (nL=1.43). A few pairs of 
quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%.  

We review some of our results for different devices: Infrared sensor arrays for thermal 

imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), 

optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW 

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mid-IR-detectors and -lasers. IV-VIs are tolerant to structural defects (dislocations). This 

allows lattice mismatched MBE-growth on foreign substrates like Si which offers significant 
advantages with respect to size, costs and thermal conductivities.  

In addition, IV-VIs are unique as regards design of Bragg mirrors because of the very 

high index contrast between IV-VI materials (nH =  4-5) and BaF2 (nL=1.43). A few pairs of 
quarter wavelength nH/nL-stacks suffice to obtain very high reflectivities R>99%.  

We review some of our results for different devices: Infrared sensor arrays for thermal 

imaging on active Si read-out chips, RCEDs (resonant cavity enhanced IR detectors), 

optically pumped PbSe/Pb1-xEuxSe edge emitting DH (double heterostructure) or QW 

(quantum well) lasers on Si substrates and “wavelength transformers”, VCSEL (vertical 

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<dc:title>Lead chalcogenide IR-emitters and detectors on Si-substrates
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“ ... ”

SM ISO690:2012

ZOGG, H.; ARNOLD, M.; ZIMIN, D.; ALCHALABI, K.. Lead chalcogenide IR-emitters and detectors on Si-substrates . In: Moldavian Journal of the Physical Sciences. 2006, nr. 1(5), pp. 88-96. ISSN 1810-648X.