Archive: 2006 - Moldavian Journal of the Physical Sciences

05 Jan 2006

2006
V. 5
1
(p.32 - 36)

Deep gallium-induced defect states in Pb1-xSnxTe

Authors:

Skipetrov, E.; Zvereva, E.; Dmitriev, N.; Golubev, A.; Sliniko, V.

Summary:

The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were investigated. It was found for samples with tin content x≤0.06 the temperature dependences of resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi level in the energy spectrum. The activation energy for “insulating” samples as well as the Fermi level position for “metallic” samples were determined and used to build the energy level diagram.

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BibTeX

@article{ibn_3413,
author = {Skipetrov, E.P. and Zvereva, E.A. and Dmitriev, N.N. and Golubev, A.V. and Sliniko, V.E.},
title = {Deep gallium-induced defect states in Pb1-xSnxTe},
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (1)},
pages = {32-36},
month = {Jan},
abstract = {(EN) The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were 
investigated. It was found for samples with tin content x≤0.06 the temperature dependences of 
resistivity and the Hall coefficient have a low temperature activation range of impurity ionization, 
while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed 
assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi 
level in the energy spectrum. The activation energy for “insulating” samples as well as the Fermi 
level position for “metallic” samples were determined and used to build the energy level diagram. },
url = {https://ibn.idsi.md/vizualizare_articol/3413},
}

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<dc:description xml:lang='en'>The galvanomagnetic effects in Pb1-xSnxTe: Ga under variation of alloy composition were 
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while for samples with 0.09≤x≤0.21 they have a “metallic” character. The results were discussed 
assuming an appearance of two different deep impurity levels EGa1 and EGa stabilizing the Fermi 
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level position for “metallic” samples were determined and used to build the energy level diagram. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 5 (1) 32-36</dc:source>
<dc:title>Deep gallium-induced defect states in Pb1-xSnxTe</dc:title>
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“ ... ”

SM ISO690:2012

SKIPETROV, E.; ZVEREVA, E.; DMITRIEV, N.; GOLUBEV, A.; SLINIKO, V.. Deep gallium-induced defect states in Pb1-xSnxTe. In: Moldavian Journal of the Physical Sciences. 2006, nr. 1(5), pp. 32-36. ISSN 1810-648X.