Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
Authors:
Avdonin, A.; Ivanova, Galina; Nedeoglo, Dumitru; Nedeoglo, Natalia
Summary:
Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated
in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by
overlapping of the PL lines attributed to ISe donor-bound ecxitons (
I
2 I ) and VZn acceptor-
bound excitons ( D
1 I ). A model of radiation mechanisms, which explain the redistribution of
the edge and long-wave PL bands intensities with increasing doping level of the samples, is
proposed.
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<meta name="citation_title" content="Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion "> <meta name="citation_author" content="Avdonin, A."> <meta name="citation_author" content="Ivanova, Galina"> <meta name="citation_author" content="Nedeoglo, Dumitru"> <meta name="citation_author" content="Nedeoglo, Natalia"> <meta name="citation_publication_date" content="2006/01/05"> <meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences"> <meta name="citation_volume" content="5"> <meta name="citation_issue" content="1"> <meta name="citation_firstpage" content="23"> <meta name="citation_lastpage" content="26"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Photoluminescence%20of%20n_ZnSe%20single%20crystals%20doped%20with%20iodine%20by%20vapour%20phase%20diffusion.pdf">
Crossref
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CERIF
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BibTeX
@article{ibn_3407,
author = {Avdonin, A. and Ivanova, G.N. and Nedeoglo, D.D. and Nedeoglo, N.D.},
title = {Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion },
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (1)},
pages = {23-26},
month = {Jan},
abstract = {(EN) Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated
in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by
overlapping of the PL lines attributed to ISe donor-bound ecxitons (
I
2 I ) and VZn acceptor-
bound excitons ( D
1 I ). A model of radiation mechanisms, which explain the redistribution of
the edge and long-wave PL bands intensities with increasing doping level of the samples, is
proposed.
},
url = {https://ibn.idsi.md/vizualizare_articol/3407},
}
DataCite
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Dublin Core
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Avdonin, A.</dc:creator> <dc:creator>Ivanova, G.N.</dc:creator> <dc:creator>Nedeoglo, D.D.</dc:creator> <dc:creator>Nedeoglo, N.D.</dc:creator> <dc:date>2006-01-05</dc:date> <dc:description xml:lang='en'>Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I ). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed. </dc:description> <dc:source>Moldavian Journal of the Physical Sciences 5 (1) 23-26</dc:source> <dc:title>Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion </dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>