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  • Archive: 2006
05 Jan 2006
  • 2006
  • V. 5
  • 1
  • (p.23 - 26)

Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Authors:

Avdonin, A.; Ivanova, Galina; Nedeoglo, Dumitru; Nedeoglo, Natalia

Summary:

Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I ). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.

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<meta name="citation_author" content="Ivanova, Galina">
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BibTeX

@article{ibn_3407,
author = {Avdonin, A. and Ivanova, G.N. and Nedeoglo, D.D. and Nedeoglo, N.D.},
title = {Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion },
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (1)},
pages = {23-26},
month = {Jan},
abstract = {(EN) Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated 

in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by 
overlapping of the PL lines attributed to ISe donor-bound ecxitons (
I
2 I ) and VZn acceptor-
bound excitons ( D
1 I ). A model of radiation mechanisms, which explain the redistribution of 
the edge and long-wave PL bands intensities with increasing doping level of the samples, is 
proposed. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/3407},
}

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I
2 I ) and VZn acceptor-
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1 I ). A model of radiation mechanisms, which explain the redistribution of 
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Dublin Core

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<dc:creator>Avdonin, A.</dc:creator>
<dc:creator>Ivanova, G.N.</dc:creator>
<dc:creator>Nedeoglo, D.D.</dc:creator>
<dc:creator>Nedeoglo, N.D.</dc:creator>
<dc:date>2006-01-05</dc:date>
<dc:description xml:lang='en'>Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated 

in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by 
overlapping of the PL lines attributed to ISe donor-bound ecxitons (
I
2 I ) and VZn acceptor-
bound excitons ( D
1 I ). A model of radiation mechanisms, which explain the redistribution of 
the edge and long-wave PL bands intensities with increasing doping level of the samples, is 
proposed. 
 </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 5 (1) 23-26</dc:source>
<dc:title>Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

        

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AVDONIN, A.; IVANOVA, Galina; NEDEOGLO, Dumitru; NEDEOGLO, Natalia. Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion . In: Moldavian Journal of the Physical Sciences. 2006, nr. 1(5), pp. 23-26. ISSN 1810-648X.

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