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  • Archive: 2006
05 Jan 2006
  • 2006
  • V. 5
  • 1
  • (p.11 - 14)

Kinetic model of radiative recombination processes in 2H-MoS2 crystals

Authors:

Dumcenco, Dumitru

Summary:

Steady-state photoluminescence (PL) measurements revealed 2H-MoS2 crystals. Two distinct radiative regions in the near infrared are performed. The first region consisting of several sharp lines is produced by bound excitons related to the halogen transport agent intercalated within the van der Waals gap of the layered compound. The second region is a broad spectral band, originates from the radiative recombination between an intrinsic defect center and the valence band in the conditions of a strong electron-phonon coupling. The spectral and temperature behavior of the PL intensity are described in the framework of a two- channel kinetic recombination model in thermal equilibrium conditions.

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intercalated within the van der Waals gap of the layered compound. The second region is a 
broad spectral band, originates from the radiative recombination between an intrinsic defect 
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BibTeX

@article{ibn_3397,
author = {Dumcenco, D.},
title = {Kinetic model of radiative recombination processes in 2H-MoS2 crystals 
},
journal = {Moldavian Journal of the Physical Sciences},
year = {2006},
volume = {5 (1)},
pages = {11-14},
month = {Jan},
abstract = {(EN) Steady-state photoluminescence (PL) measurements revealed 2H-MoS2 crystals. Two 

distinct radiative regions in the near infrared are performed. The first region consisting of 
several sharp lines is produced by bound excitons related to the halogen transport agent 
intercalated within the van der Waals gap of the layered compound. The second region is a 
broad spectral band, originates from the radiative recombination between an intrinsic defect 
center and the valence band in the conditions of a strong electron-phonon coupling. The 
spectral and temperature behavior of the PL intensity are described in the framework of a two-
channel kinetic recombination model in thermal equilibrium conditions. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/3397},
}

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distinct radiative regions in the near infrared are performed. The first region consisting of 
several sharp lines is produced by bound excitons related to the halogen transport agent 
intercalated within the van der Waals gap of the layered compound. The second region is a 
broad spectral band, originates from the radiative recombination between an intrinsic defect 
center and the valence band in the conditions of a strong electron-phonon coupling. The 
spectral and temperature behavior of the PL intensity are described in the framework of a two-
channel kinetic recombination model in thermal equilibrium conditions. 
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Dublin Core

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<dc:creator>Dumcenco, D.</dc:creator>
<dc:date>2006-01-05</dc:date>
<dc:description xml:lang='en'>Steady-state photoluminescence (PL) measurements revealed 2H-MoS2 crystals. Two 

distinct radiative regions in the near infrared are performed. The first region consisting of 
several sharp lines is produced by bound excitons related to the halogen transport agent 
intercalated within the van der Waals gap of the layered compound. The second region is a 
broad spectral band, originates from the radiative recombination between an intrinsic defect 
center and the valence band in the conditions of a strong electron-phonon coupling. The 
spectral and temperature behavior of the PL intensity are described in the framework of a two-
channel kinetic recombination model in thermal equilibrium conditions. 
 </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 5 (1) 11-14</dc:source>
<dc:title>Kinetic model of radiative recombination processes in 2H-MoS2 crystals 
</dc:title>
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DUMCENCO, Dumitru. Kinetic model of radiative recombination processes in 2H-MoS2 crystals . In: Moldavian Journal of the Physical Sciences. 2006, nr. 1(5), pp. 11-14. ISSN 1810-648X.

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