Archive: 2005 - Moldavian Journal of the Physical Sciences

05 Dec 2005

2005
V. 4
4
(p.481 - 484)

New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

Authors:

Rusu, Emil

Summary:

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
">
<meta name="citation_author" content="Rusu, Emil">
<meta name="citation_publication_date" content="2005/12/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="4">
<meta name="citation_issue" content="4">
<meta name="citation_firstpage" content="481">
<meta name="citation_lastpage" content="484">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/New%20manufacturing%20technology%20for%20InP%20epitaxial%20layers%20and%20properties%20of%20schottky%20diodes%20made%20on%20their%20basis.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-3379</doi_batch_id>
<timestamp>1597500553</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2005</year>
</publication_date>
<issue>4(4)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
</title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Emil</given_name>
<surname>Rusu</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2005</year>
</publication_date>
<pages>
<first_page>481</first_page>
<last_page>484</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-3379</cfResPublId>
<cfResPublDate>2005-12-05</cfResPublDate>
<cfVol>4</cfVol>
<cfIssue>4</cfIssue>
<cfStartPage>481</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2005/article/3379</cfURI>
<cfTitle cfLangCode='EN' cfTrans='o'>New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>A new technological approach to production of structurally perfect epitaxial films LPE-

grown  on  “soft”  porous  n 
 -InP  substrates  is  considered. We  studied  surface  morphology, 
boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky 
diodes made on “soft” and “rigid”  (standard) n 
 -InP  substrates. The advantages of epitaxial 
layers  grown  on  porous  n 
 -InP  substrates  and  barrier  structures  on  their  basis  are 
demonstrated </cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-12-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2005-12-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-1751</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-12-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-1751</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1751-3</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2005-12-05T24:00:00</cfStartDate>
<cfFamilyNames>Русу</cfFamilyNames>
<cfFirstNames>Емил</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_3379,
author = {Rusu, E.V.},
title = {New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
},
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (4)},
pages = {481-484},
month = {Dec},
abstract = {(EN) A new technological approach to production of structurally perfect epitaxial films LPE-

grown  on  “soft”  porous  n 
 -InP  substrates  is  considered. We  studied  surface  morphology, 
boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky 
diodes made on “soft” and “rigid”  (standard) n 
 -InP  substrates. The advantages of epitaxial 
layers  grown  on  porous  n 
 -InP  substrates  and  barrier  structures  on  their  basis  are 
demonstrated },
url = {https://ibn.idsi.md/vizualizare_articol/3379},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Rusu, E.V.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2005</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2005-12-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>A new technological approach to production of structurally perfect epitaxial films LPE-

grown  on  “soft”  porous  n 
 -InP  substrates  is  considered. We  studied  surface  morphology, 
boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky 
diodes made on “soft” and “rigid”  (standard) n 
 -InP  substrates. The advantages of epitaxial 
layers  grown  on  porous  n 
 -InP  substrates  and  barrier  structures  on  their  basis  are 
demonstrated </description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Rusu, E.V.</dc:creator>
<dc:date>2005-12-05</dc:date>
<dc:description xml:lang='en'>A new technological approach to production of structurally perfect epitaxial films LPE-

grown  on  “soft”  porous  n 
 -InP  substrates  is  considered. We  studied  surface  morphology, 
boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky 
diodes made on “soft” and “rigid”  (standard) n 
 -InP  substrates. The advantages of epitaxial 
layers  grown  on  porous  n 
 -InP  substrates  and  barrier  structures  on  their  basis  are 
demonstrated </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (4) 481-484</dc:source>
<dc:title>New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis
</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

RUSU, Emil. New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis . In: Moldavian Journal of the Physical Sciences. 2005, nr. 4(4), pp. 481-484. ISSN 1810-648X.