Archive: 2005 - Moldavian Journal of the Physical Sciences

05 Dec 2005

2005
V. 4
4
(p.473 - 480)

Nanomechanical parameters of new carbazolyle-containing photoresist polymers

Authors:

Vatavu, Sergiu; Gaşin, Petru; Caraman, Iuliana

Summary:

The photoluminescence and absoption spectral distribution close to the edge of fundamental band were studied in the CdS and CdTe films components of the CdS/CdTe heterojunctions. Recombination level energetic position was determined. The annealing of the CdS/CdTe heterojunctions in presence of CdCl2 results in formation of new recombination levels, revealed by a luminescent band in the energy range of 1.6-1.7 eV and by the shift of the impurity band maximum to the red wavelength region by 50 meV.

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<meta name="citation_title" content="Nanomechanical parameters of new carbazolyle-containing photoresist polymers ">
<meta name="citation_author" content="Vatavu, Sergiu">
<meta name="citation_author" content="Gaşin, Petru">
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Crossref

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BibTeX

@article{ibn_3373,
author = {Vatavu, S. and Gaşin, P.A. and Caraman, I.M.},
title = {Nanomechanical parameters of new carbazolyle-containing photoresist polymers },
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (4)},
pages = {473-480},
month = {Dec},
abstract = {(EN) The  photoluminescence  and  absoption  spectral  distribution  close  to  the  edge  of 

fundamental  band were  studied  in  the  CdS  and  CdTe  films  components  of  the  CdS/CdTe 
heterojunctions. Recombination level energetic position was determined. The annealing of the 
CdS/CdTe  heterojunctions  in  presence  of CdCl2  results  in  formation  of  new  recombination 
levels, revealed by a  luminescent band  in  the energy range of 1.6-1.7 eV and by  the shift of 
the impurity band maximum to the red wavelength region by 50 meV. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/3373},
}

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<title xml:lang='ro'>Nanomechanical parameters of new carbazolyle-containing photoresist polymers </title>
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heterojunctions. Recombination level energetic position was determined. The annealing of the 
CdS/CdTe  heterojunctions  in  presence  of CdCl2  results  in  formation  of  new  recombination 
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Dublin Core

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<dc:creator>Vatavu, S.</dc:creator>
<dc:creator>Gaşin, P.A.</dc:creator>
<dc:creator>Caraman, I.M.</dc:creator>
<dc:date>2005-12-05</dc:date>
<dc:description xml:lang='en'>The  photoluminescence  and  absoption  spectral  distribution  close  to  the  edge  of 

fundamental  band were  studied  in  the  CdS  and  CdTe  films  components  of  the  CdS/CdTe 
heterojunctions. Recombination level energetic position was determined. The annealing of the 
CdS/CdTe  heterojunctions  in  presence  of CdCl2  results  in  formation  of  new  recombination 
levels, revealed by a  luminescent band  in  the energy range of 1.6-1.7 eV and by  the shift of 
the impurity band maximum to the red wavelength region by 50 meV. 
 </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (4) 473-480</dc:source>
<dc:title>Nanomechanical parameters of new carbazolyle-containing photoresist polymers </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

VATAVU, Sergiu; GAŞIN, Petru; CARAMAN, Iuliana. Nanomechanical parameters of new carbazolyle-containing photoresist polymers . In: Moldavian Journal of the Physical Sciences. 2005, nr. 4(4), pp. 473-480. ISSN 1810-648X.