Archive: 2005 - Moldavian Journal of the Physical Sciences

05 Dec 2005

2005
V. 4
4
(p.464 - 467)

Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers

Authors:

Zalamai, Victor

Summary:

Resonant Raman scattering (RRS) excited by the 351.1 and 363.8 nm lines of an Ar laser was studied in the temperature interval from 10 to 300 K in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The occurrence of RRS is attributed to the resonance of outgoing photons scattered in multiphonon processes with electronic transitions involving an impurity (native defects) band.

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laser was  studied  in  the  temperature  interval  from  10  to  300 K  in  highly conductive  ZnO 
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BibTeX

@article{ibn_3363,
author = {Zalamai, V.V.},
title = {Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers },
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (4)},
pages = {464-467},
month = {Dec},
abstract = {(EN) Resonant Raman  scattering  (RRS) excited by  the 351.1 and 363.8 nm  lines of an Ar  

laser was  studied  in  the  temperature  interval  from  10  to  300 K  in  highly conductive  ZnO 
layers  deposited  by  thermal  decomposition  of  Zn(C5H7O2)2  metalorganic  compound  on 
porous  InP  substrates.  The  occurrence  of  RRS  is  attributed  to  the  resonance  of  outgoing 
photons scattered  in multiphonon processes with electronic  transitions  involving an  impurity 
(native defects) band. 
 },
url = {https://ibn.idsi.md/vizualizare_articol/3363},
}

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laser was  studied  in  the  temperature  interval  from  10  to  300 K  in  highly conductive  ZnO 
layers  deposited  by  thermal  decomposition  of  Zn(C5H7O2)2  metalorganic  compound  on 
porous  InP  substrates.  The  occurrence  of  RRS  is  attributed  to  the  resonance  of  outgoing 
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(native defects) band. 
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Dublin Core

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<dc:creator>Zalamai, V.V.</dc:creator>
<dc:date>2005-12-05</dc:date>
<dc:description xml:lang='en'>Resonant Raman  scattering  (RRS) excited by  the 351.1 and 363.8 nm  lines of an Ar  

laser was  studied  in  the  temperature  interval  from  10  to  300 K  in  highly conductive  ZnO 
layers  deposited  by  thermal  decomposition  of  Zn(C5H7O2)2  metalorganic  compound  on 
porous  InP  substrates.  The  occurrence  of  RRS  is  attributed  to  the  resonance  of  outgoing 
photons scattered  in multiphonon processes with electronic  transitions  involving an  impurity 
(native defects) band. 
 </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (4) 464-467</dc:source>
<dc:title>Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers </dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
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“ ... ”

SM ISO690:2012

ZALAMAI, Victor. Multiphonon impurity-mediated resonant raman scattering from highly conductive ZnO layers . In: Moldavian Journal of the Physical Sciences. 2005, nr. 4(4), pp. 464-467. ISSN 1810-648X.