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  • Archive: 2005
05 Nov 2005
  • 2005
  • V. 4
  • 3
  • (p.357 - 362)

Method of study gallium and arsenic losses in technology of gallium arsenate obtained from wastes

Authors:

Baranov, Serghei; Cinic, Boris; Bogdevici, Oleg; Izmailova, Dina; Redwing, J.

Summary:

Having the goal to recover gallium (Ga) and arsenic (As) from technological wastes derived from the process of growing epitaxial gallium arsenide structures, it is proposed to extract gallium arsenate (GaAsO4) by precipitation and filtration of the sediment. In this paper it is proposed to measure the concentrations of Ga and As by means of the atomic absorption spectrometer AAnalyst 800 directly in the filtrate solution. We compare the results obtained by two methods of elemental Ga and As atomization: flame and thermal atomization. The values of Ga and As concentrations in filtrate are function of pH for solutions containing 1- 680 mg/1 of Ga and 55-880 mg/1 of As. The developed method can be used to study and further optimize the technological process.

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BibTeX

@article{ibn_3279,
author = {Baranov, S.A. and Cinic, B.I. and Bogdevici, O.P. and Izmailova, D.N. and Redwing, J.},
title = {Method of study gallium and arsenic losses in technology of gallium arsenate obtained from wastes},
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (3)},
pages = {357-362},
month = {Nov},
abstract = {(EN) Having  the  goal  to  recover  gallium  (Ga)  and  arsenic  (As)  from  technological wastes 
derived  from  the process of growing  epitaxial gallium  arsenide  structures,  it  is proposed  to 
extract gallium arsenate (GaAsO4) by precipitation and filtration of the sediment. In this paper 
it is proposed to measure the concentrations of Ga and As by means of the atomic absorption 
spectrometer AAnalyst 800 directly  in  the  filtrate solution. We compare  the  results obtained 
by  two methods  of  elemental Ga  and As  atomization:  flame  and  thermal  atomization. The 
values of Ga and As concentrations  in filtrate are function of pH for solutions containing 1-
680 mg/1  of Ga  and  55-880 mg/1  of As. The  developed method  can  be  used  to  study  and 
further optimize the technological process. },
url = {https://ibn.idsi.md/vizualizare_articol/3279},
}

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derived  from  the process of growing  epitaxial gallium  arsenide  structures,  it  is proposed  to 
extract gallium arsenate (GaAsO4) by precipitation and filtration of the sediment. In this paper 
it is proposed to measure the concentrations of Ga and As by means of the atomic absorption 
spectrometer AAnalyst 800 directly  in  the  filtrate solution. We compare  the  results obtained 
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<dc:date>2005-11-05</dc:date>
<dc:description xml:lang='en'>Having  the  goal  to  recover  gallium  (Ga)  and  arsenic  (As)  from  technological wastes 
derived  from  the process of growing  epitaxial gallium  arsenide  structures,  it  is proposed  to 
extract gallium arsenate (GaAsO4) by precipitation and filtration of the sediment. In this paper 
it is proposed to measure the concentrations of Ga and As by means of the atomic absorption 
spectrometer AAnalyst 800 directly  in  the  filtrate solution. We compare  the  results obtained 
by  two methods  of  elemental Ga  and As  atomization:  flame  and  thermal  atomization. The 
values of Ga and As concentrations  in filtrate are function of pH for solutions containing 1-
680 mg/1  of Ga  and  55-880 mg/1  of As. The  developed method  can  be  used  to  study  and 
further optimize the technological process. </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (3) 357-362</dc:source>
<dc:title>Method of study gallium and arsenic losses in technology of gallium arsenate obtained from wastes</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

        

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BARANOV, Serghei; CINIC, Boris; BOGDEVICI, Oleg; IZMAILOVA, Dina; REDWING, J.. Method of study gallium and arsenic losses in technology of gallium arsenate obtained from wastes. In: Moldavian Journal of the Physical Sciences. 2005, nr. 3(4), pp. 357-362. ISSN 1810-648X.

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