Archive: 2005 - Moldavian Journal of the Physical Sciences

05 Nov 2005

2005
V. 4
3
(p.332 - 341)

Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films

Authors:

Iovu, Mihail; Colomeico, Eduard; Vasiliev, Ion; Harea, Diana

Summary:

Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous films, excited by a monochromatic light pulse with long-wavelength of 0.63 mm was investigated. The relaxation of the photocurrent has been recorded in the wide time interval (from 0.05 up to 25 s) and was determined by capture on the deep acceptor-like traps. In a non-doped sample of a-As2Se3 the relaxation of the photocurrent weakly depends on a level of optical bias. For the samples with tin impurity, even the low levels of optical bias result in sharp reduction of the photocurrent. The experimental results are discussed in frame of the model of recombination controlled by capture on deep states.

Download PDF

Export Metadata

Google Scholar

<meta name="citation_title" content="Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
">
<meta name="citation_author" content="Iovu, Mihail">
<meta name="citation_author" content="Colomeico, Eduard">
<meta name="citation_author" content="Vasiliev, Ion">
<meta name="citation_author" content="Harea, Diana">
<meta name="citation_publication_date" content="2005/11/05">
<meta name="citation_journal_title" content="Moldavian Journal of the Physical Sciences">
<meta name="citation_volume" content="4">
<meta name="citation_issue" content="3">
<meta name="citation_firstpage" content="332">
<meta name="citation_lastpage" content="341">
<meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/Optical%20bias%20effect%20on%20transient%20photocurrent%20in%20amorphous%20As2Se3%20Sn%20films.pdf">

Crossref

<?xml version='1.0' encoding='utf-8'?>
<doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'>
<head>
<doi_batch_id>ibn-3261</doi_batch_id>
<timestamp>1597501047</timestamp>
<depositor>
<depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name>
<email_address>mjps@nanotech.md</email_address>
</depositor>
<registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM</registrant>
</head>
<body>
<journal>
<journal_metadata>
<full_title>Moldavian Journal of the Physical Sciences</full_title>
<issn media_type='print'>1810648X</issn>
</journal_metadata>
<journal_issue>
<publication_date media_type='print'>
<year>2005</year>
</publication_date>
<issue>3(4)</issue>
</journal_issue>
<journal_article publication_type='full_text'><titles>
<title>Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
</title>
</titles>
<contributors>
<person_name sequence='first' contributor_role='author'>
<given_name>Mihail</given_name>
<surname>Iovu</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Eduard</given_name>
<surname>Colomeico</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Ion</given_name>
<surname>Vasiliev</surname>
</person_name>
<person_name sequence='additional' contributor_role='author'>
<given_name>Diana</given_name>
<surname>Harea</surname>
</person_name>
</contributors>
<publication_date media_type='print'>
<year>2005</year>
</publication_date>
<pages>
<first_page>332</first_page>
<last_page>341</last_page>
</pages>
</journal_article>
</journal>
</body>
</doi_batch>

CERIF

<?xml version='1.0' encoding='utf-8'?>
<CERIF xmlns='urn:xmlns:org:eurocris:cerif-1.5-1' xsi:schemaLocation='urn:xmlns:org:eurocris:cerif-1.5-1 http://www.eurocris.org/Uploads/Web%20pages/CERIF-1.5/CERIF_1.5_1.xsd' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' release='1.5' date='2012-10-07' sourceDatabase='Output Profile'>
<cfResPubl>
<cfResPublId>ibn-ResPubl-3261</cfResPublId>
<cfResPublDate>2005-11-05</cfResPublDate>
<cfVol>4</cfVol>
<cfIssue>3</cfIssue>
<cfStartPage>332</cfStartPage>
<cfISSN>1810-648X</cfISSN>
<cfURI>http://mjps.utm.md/archive/2005/article/3261</cfURI>
<cfTitle cfLangCode='RO' cfTrans='o'>Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
</cfTitle>
<cfAbstr cfLangCode='EN' cfTrans='o'>Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous 

films,  excited  by  a  monochromatic  light  pulse  with  long-wavelength  of  0.63  mm  was 
investigated. The  relaxation of  the photocurrent has been  recorded  in  the wide  time  interval 
(from 0.05 up  to 25  s) and was determined by capture on  the deep acceptor-like  traps.  In a 
non-doped sample of a-As2Se3  the relaxation of  the photocurrent weakly depends on a  level 
of optical bias. For the samples with tin impurity, even the low levels of optical bias result in 
sharp  reduction of  the photocurrent. The  experimental  results  are discussed  in  frame of  the 
model of recombination controlled by capture on deep states.</cfAbstr>
<cfResPubl_Class>
<cfClassId>eda2d9e9-34c5-11e1-b86c-0800200c9a66</cfClassId>
<cfClassSchemeId>759af938-34ae-11e1-b86c-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfResPubl_Class>
<cfClassId>e601872f-4b7e-4d88-929f-7df027b226c9</cfClassId>
<cfClassSchemeId>40e90e2f-446d-460a-98e5-5dce57550c48</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
</cfResPubl_Class>
<cfPers_ResPubl>
<cfPersId>ibn-person-287</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-994</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-1081</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
<cfPers_ResPubl>
<cfPersId>ibn-person-13174</cfPersId>
<cfClassId>49815870-1cfe-11e1-8bc2-0800200c9a66</cfClassId>
<cfClassSchemeId>b7135ad0-1d00-11e1-8bc2-0800200c9a66</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
</cfPers_ResPubl>
</cfResPubl>
<cfPers>
<cfPersId>ibn-Pers-287</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-287-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
<cfFamilyNames>Iovu</cfFamilyNames>
<cfFirstNames>Mihail</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-994</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-994-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
<cfFamilyNames>Colomeico</cfFamilyNames>
<cfFirstNames>Eduard</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-1081</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-1081-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
<cfFamilyNames>Vasiliev</cfFamilyNames>
<cfFirstNames>Ion</cfFirstNames>
</cfPersName_Pers>
</cfPers>
<cfPers>
<cfPersId>ibn-Pers-13174</cfPersId>
<cfPersName_Pers>
<cfPersNameId>ibn-PersName-13174-2</cfPersNameId>
<cfClassId>55f90543-d631-42eb-8d47-d8d9266cbb26</cfClassId>
<cfClassSchemeId>7375609d-cfa6-45ce-a803-75de69abe21f</cfClassSchemeId>
<cfStartDate>2005-11-05T24:00:00</cfStartDate>
<cfFamilyNames>Harea</cfFamilyNames>
<cfFirstNames>Diana</cfFirstNames>
</cfPersName_Pers>
</cfPers>
</CERIF>

BibTeX

@article{ibn_3261,
author = {Iovu, M.S. and Colomeico, E.P. and Vasiliev, I.A. and Harea, D.V.},
title = {Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
},
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (3)},
pages = {332-341},
month = {Nov},
abstract = {(EN) Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous 

films,  excited  by  a  monochromatic  light  pulse  with  long-wavelength  of  0.63  mm  was 
investigated. The  relaxation of  the photocurrent has been  recorded  in  the wide  time  interval 
(from 0.05 up  to 25  s) and was determined by capture on  the deep acceptor-like  traps.  In a 
non-doped sample of a-As2Se3  the relaxation of  the photocurrent weakly depends on a  level 
of optical bias. For the samples with tin impurity, even the low levels of optical bias result in 
sharp  reduction of  the photocurrent. The  experimental  results  are discussed  in  frame of  the 
model of recombination controlled by capture on deep states.},
url = {https://ibn.idsi.md/vizualizare_articol/3261},
}

DataCite

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<creators>
<creator>
<creatorName>Iovu, M.S.</creatorName>
</creator>
<creator>
<creatorName>Colomeico, E.P.</creatorName>
</creator>
<creator>
<creatorName>Vasiliev, I.A.</creatorName>
</creator>
<creator>
<creatorName>Harea, D.V.</creatorName>
</creator>
</creators>
<titles>
<title xml:lang='ro'>Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2005</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<dates>
<date dateType='Issued'>2005-11-05</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous 

films,  excited  by  a  monochromatic  light  pulse  with  long-wavelength  of  0.63  mm  was 
investigated. The  relaxation of  the photocurrent has been  recorded  in  the wide  time  interval 
(from 0.05 up  to 25  s) and was determined by capture on  the deep acceptor-like  traps.  In a 
non-doped sample of a-As2Se3  the relaxation of  the photocurrent weakly depends on a  level 
of optical bias. For the samples with tin impurity, even the low levels of optical bias result in 
sharp  reduction of  the photocurrent. The  experimental  results  are discussed  in  frame of  the 
model of recombination controlled by capture on deep states.</description>
</descriptions>
<formats>
<format>application/pdf</format>
</formats>
</resource>

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Iovu, M.S.</dc:creator>
<dc:creator>Colomeico, E.P.</dc:creator>
<dc:creator>Vasiliev, I.A.</dc:creator>
<dc:creator>Harea, D.V.</dc:creator>
<dc:date>2005-11-05</dc:date>
<dc:description xml:lang='en'>Optical bias effect on transient photocurrent of As2Se3: Snx (x=0¸1.0 at.%) amorphous 

films,  excited  by  a  monochromatic  light  pulse  with  long-wavelength  of  0.63  mm  was 
investigated. The  relaxation of  the photocurrent has been  recorded  in  the wide  time  interval 
(from 0.05 up  to 25  s) and was determined by capture on  the deep acceptor-like  traps.  In a 
non-doped sample of a-As2Se3  the relaxation of  the photocurrent weakly depends on a  level 
of optical bias. For the samples with tin impurity, even the low levels of optical bias result in 
sharp  reduction of  the photocurrent. The  experimental  results  are discussed  in  frame of  the 
model of recombination controlled by capture on deep states.</dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (3) 332-341</dc:source>
<dc:title>Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films
</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

“ ... ”

SM ISO690:2012

IOVU, Mihail; COLOMEICO, Eduard; VASILIEV, Ion; HAREA, Diana. Optical bias effect on transient photocurrent in amorphous As2Se3: Sn films . In: Moldavian Journal of the Physical Sciences. 2005, nr. 3(4), pp. 332-341. ISSN 1810-648X.