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  • Archive: 2005
05 Jan 2005
  • 2005
  • V. 4
  • 1
  • (p.86 - 89)

Tin dioxide based thin film gas sensor of hydrogen

Authors:

Dmitriev, Serghei

Summary:

Results of investigation of the SnO2 thin films sensitivity towards to hydrogen are presented. Films were deposited by chemical spray pyrolysis method on ceramic substrate. Study of electrical characteristics of obtained layers has shown that the latter possess resistance on the level 105 -106 Ohm at the working temperatures 200-250 o C. Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and surface doping with Pd and Cu has allowed increasing of hydrogen sensitivity up to 103 rel. units. Simultaneously, the considerable shift of the working temperatures of such sensor to the low temperature value (150o C) was achieved.

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<cfAbstr cfLangCode='EN' cfTrans='o'>Results  of  investigation  of  the  SnO2  thin  films  sensitivity  towards  to  hydrogen  are 
presented. Films were  deposited  by  chemical  spray  pyrolysis method  on ceramic  substrate. 
Study  of  electrical  characteristics  of  obtained  layers  has  shown  that  the  latter  possess 
resistance on the level 105
-106 Ohm at the working temperatures 200-250 o
C. 
Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of 
hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and 
surface doping with Pd and Cu has allowed  increasing of hydrogen sensitivity up  to 103 
rel. 
units. Simultaneously, the considerable shift of the working temperatures of such sensor to the 
low temperature value (150o
C) was achieved.    </cfAbstr>
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BibTeX

@article{ibn_3064,
author = {Dmitriev, S.},
title = {Tin dioxide based thin film gas sensor of hydrogen},
journal = {Moldavian Journal of the Physical Sciences},
year = {2005},
volume = {4 (1)},
pages = {86-89},
month = {Jan},
abstract = {(EN) Results  of  investigation  of  the  SnO2  thin  films  sensitivity  towards  to  hydrogen  are 
presented. Films were  deposited  by  chemical  spray  pyrolysis method  on ceramic  substrate. 
Study  of  electrical  characteristics  of  obtained  layers  has  shown  that  the  latter  possess 
resistance on the level 105
-106 Ohm at the working temperatures 200-250 o
C. 
Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of 
hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and 
surface doping with Pd and Cu has allowed  increasing of hydrogen sensitivity up  to 103 
rel. 
units. Simultaneously, the considerable shift of the working temperatures of such sensor to the 
low temperature value (150o
C) was achieved.    },
url = {https://ibn.idsi.md/vizualizare_articol/3064},
}

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<description xml:lang='en' descriptionType='Abstract'>Results  of  investigation  of  the  SnO2  thin  films  sensitivity  towards  to  hydrogen  are 
presented. Films were  deposited  by  chemical  spray  pyrolysis method  on ceramic  substrate. 
Study  of  electrical  characteristics  of  obtained  layers  has  shown  that  the  latter  possess 
resistance on the level 105
-106 Ohm at the working temperatures 200-250 o
C. 
Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of 
hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and 
surface doping with Pd and Cu has allowed  increasing of hydrogen sensitivity up  to 103 
rel. 
units. Simultaneously, the considerable shift of the working temperatures of such sensor to the 
low temperature value (150o
C) was achieved.    </description>
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Dublin Core

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<dc:creator>Dmitriev, S.</dc:creator>
<dc:date>2005-01-05</dc:date>
<dc:description xml:lang='en'>Results  of  investigation  of  the  SnO2  thin  films  sensitivity  towards  to  hydrogen  are 
presented. Films were  deposited  by  chemical  spray  pyrolysis method  on ceramic  substrate. 
Study  of  electrical  characteristics  of  obtained  layers  has  shown  that  the  latter  possess 
resistance on the level 105
-106 Ohm at the working temperatures 200-250 o
C. 
Gas sensitivity S of deposited thin films amounted 95-100 relative units to 0.1 vol.% of 
hydrogen in air. Optimization of gas sensitive properties of tin dioxide films through bulk and 
surface doping with Pd and Cu has allowed  increasing of hydrogen sensitivity up  to 103 
rel. 
units. Simultaneously, the considerable shift of the working temperatures of such sensor to the 
low temperature value (150o
C) was achieved.    </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (1) 86-89</dc:source>
<dc:title>Tin dioxide based thin film gas sensor of hydrogen</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>

        

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DMITRIEV, Serghei. Tin dioxide based thin film gas sensor of hydrogen. In: Moldavian Journal of the Physical Sciences. 2005, nr. 1(4), pp. 86-89. ISSN 1810-648X.

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